Silver nanoparticles have been found many interesting applications, such as absorption amplifiers in dye-sensitized solar
cells. However, silver nanoparticles are easily oxidized. In order to protect silver nanoparticles, atomic layers of TiO2were deposited onto silver nanoparticles coated to a glass slide. Then the glass slide was exposed to corrosive I-/I3- solutions, and the degree of silver etching was measured via scanning electron microscopy (SEM) and ultraviolet-visible
spectroscopy (UVS). It was found that 3 nm (30 cycles) of Al2O3 with 9 nm of (90 cycles) TiO2 could completely protect
silver nanoparticles from oxidization.
A novel PbS quantum dots (QDs) fiber amplifier based on SiO2 Sol-Gel method was proposed. The QDs doped
SiO2 films was deposited onto a fused tapered fiber coupler based on standard single mode fiber (SMF). With a 980 nm
wavelength laser diode (LD) as the pump, 1550 nm signal and 980 nm pump light waves were injected into the tapered
region simultaneously, through the evanescent wave, we obtained the gain at 1576 nm wavelength as high as 5 dB. The
proposed fiber amplififier can implement the property of a small, integrated, high output, low noise, high gain, low cost,
which meet the need of the future of optical fiber communication system.
A PbSe quantum dots (QDs) fiber amplifier has been demonstrated. The PbSe QDs were synthesized via sol-gel self-assembly
method. The size of PbSe QDs was controlled to 5.5 nm through control of the reaction time as well as the
growth temperature. Transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy were used to
characterize the PbSe QDs samples. The fiber amplifier was fabricated by coating the QDs onto a tapered optical fiber
coupler. Through evanescent wave, the QDs were excited to realize optical amplification. A 1550 nm semiconductor
light emitting diode (SLED) as the signal source and a 980 nm laser diode (LD) source as the pump were injected into
the fiber coupler simultaneously.
Nano-Rare Earth Doped Fibers (NREDFs) have shown great application for optical fiber amplifiers, fiber lasers and
sensors. The rapid development of fiber communication systems has a higher requirement on the NREDFs. Atomic layer
deposition (ALD) is a chemical vapor deposition technique based on the sequential use of self-terminating gas-solid
reactions. As a film deposition technique, ALD is known for its effective material utilization at low temperatures,
accuracy thickness control, excellent step coverage, good uniformity and adhesion, good conformability. In this paper,
ALD was used to fabricate high concentration alumina-erbium co-doped amplifying fibers. Based on Modified Chemical
Vapor Deposition (MCVD) and ALD, using nanomaterials as a dopant, the alumina-erbium co-doped amplifying fibers
were fabricated. The main advantages of this novel method include good uniformity, high dispersibility, and high doping
concentration. Scanning electron microscopy (SEM), transmission electron microscopy (TEM) images and X-ray energy
dispersive spectroscopy (EDS) showed the physical and chemical features of the deposited film upon a porous silica soot
layer. Photoluminescence (PL) and absorption spectra were used to characterize the optical properties. The fibers have
high gain, low noise, high power and are independent of polarization, which make them desirable for fiber devices.
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