Mr. Yasunobu Someya Profile

Yasunobu Someya

Scientist at Nissan Chemical Corp

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Publications (8)

Proceedings Article | 12 October 2018 Presentation

Advanced development of organic and inorganic under layers for EUV lithography (Conference Presentation)

Wataru Shibayama, Shuhei Shigaki, Satoshi Takeda, Mamoru Tamura, Yasunobu Someya, Makoto Nakajima, Rikimaru Sakamoto

Proceedings Volume 10809, 108090Y (2018) https://doi.org/10.1117/12.2503298

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Extreme ultraviolet, Lithography, Etching, Carbon, System on a chip, Metals

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Proceedings Article | 19 March 2018 Presentation

A progress report on DSA of high-chi silicon containing block co-polymers (Conference Presentation)

C. Grant Willson, Natsuko Ito, Gregory Blachut, Stephen Sirard, Yasunobu Someya, Jan Doise, Ryuta Mizuochi, Austin Lane, Geert Vandenberghe, Paulina Rincon-Delgadillo, XiaoMin Yang, Christopher Ellison

Proceedings Volume 10586, 105860O (2018) https://doi.org/10.1117/12.2299966

KEYWORDS: Silicon, Reactive ion etching, Scanning transmission electron microscopy, Optical lithography, Spectroscopy, Semiconducting wafers, Chromium

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We have developed block co-polymers (BCPs) in which one of the blocks incorporates silicon and the other does not [1]. These materials provide access to BCPs with high Flory-Huggins interaction parameters (χ) and dry etch selectivity under reactive ion etching (RIE) conditions to provide Sub-20 nm patterns [2]. Recently we have investigated a hybrid chemo/grapho-epitaxy process that provides 20 nm and 10 nm full pitch patterning and we have transferred these patterns into useful substrates. This hybrid process produced 20 nm DSA with fewer defects with this material than the conventional chemo-epitaxial process. Cross-sectional scanning transmission electron microscopy (STEM) with electron energy loss spectroscopy (EELS) confirmed that the BCP features span the entire film thickness on hybrid process wafers [3]. We have now succeeded in demonstrating DSA with poly(4-methoxystyrene-block-4-trimethylsilylstyrene) (PMOST-b-PTMSS) aligned by guidelines comprised of cross linked poly(2-vinylpyridine) (Figure a). The process was demonstrated by cross-section analysis to produce features that span the entire BCP film thickness and the introduction of nitrogen into the guide line provides new evidence for the nature of the interaction between the guide lines and the BCP(Figure b). We have also reported the DSA and pattern transfer of poly(5-vinyl-1,3-benzodioxole-block-pentamethyldisilylstyrene) (PVBD-b-PDSS) at 10 nm full pitch. However, in this case, the DSA involved a trade-off between perpendicularity and dislocation defects [4]. Improved brush materials that selectively graft to an etched Cr surface rather than etched imprint resist provide oriented and aligned 5 nm line-and-space patterns that cleanly traverse the full film thickness thickness (Figure c). 1. Bates C. M., et al. Science (2012), 338 (6108), 775. 2. Azarnouchea, L., et al. J. Vac. Sci. Technol. B (2016) 34 (6), 061602/1-061602/10. 3. Blachut, G., et al. Chem. Mater (2016), 28 (24), 8951-8961. 4. Lane A. P., et al. ACS Nano (2017), 11 (8), 7656-i7665.

Proceedings Article | 27 March 2017 Paper

Orientation control of silicon containing block-co-polymer with resolution beyond 10nm

Yasunobu Someya, Ryuta Mizuochi, Hiroyuki Wakayama, Shinsuke Tadokoro, Masami Kozawa, Rikimaru Sakamoto

Proceedings Volume 10146, 101461Y (2017) https://doi.org/10.1117/12.2258145

KEYWORDS: Directed self assembly, Etching, Dry etching, Silicon, Polymethylmethacrylate, Polymers, Annealing, Materials processing, Industrial chemicals

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Proceedings Article | 23 March 2016 Paper

Interactions between plasma and block copolymers used in directed self-assembly patterning

Stephen Sirard, Laurent Azarnouche, Emir Gurer, William Durand, Michael Maher, Kazunori Mori, Gregory Blachut, Dustin Janes, Yusuke Asano, Yasunobu Someya, Diane Hymes, David Graves, Christopher Ellison, C. Grant Willson

Proceedings Volume 9782, 97820K (2016) https://doi.org/10.1117/12.2220305

KEYWORDS: Plasma, Polymers, Etching, Silicon, Optical lithography, Plasma etching, Tin, FT-IR spectroscopy, Directed self assembly, Reactive ion etching, Picosecond phenomena, Polymethylmethacrylate

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Proceedings Article | 21 March 2016 Paper

Novel neutral under layer materials to enhance the photolithography performance and defectivity for chemo-epitaxy process

Ryuta Mizuochi, Hiroyuki Wakayama, Yasunobu Someya, Rikimaru Sakamoto

Proceedings Volume 9779, 97791Z (2016) https://doi.org/10.1117/12.2219005

KEYWORDS: Optical lithography, Lithography, Polymers, Reflectivity, Directed self assembly, Silicon, Semiconducting wafers, Image processing, Coating

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Proceedings Article | 27 March 2014 Paper

Novel surface treatment materials for aligning block-co-polymer in directed self-assembly processes

Yasunobu Someya, Hiroyuki Wakayama, Takafumi Endo, Rikimaru Sakamoto

Proceedings Volume 9051, 90510L (2014) https://doi.org/10.1117/12.2046271

KEYWORDS: System on a chip, Polymers, Etching, Semiconducting wafers, Silicon, Lithography, Photoresist processing, Carbon, Materials processing, Directed self assembly

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Proceedings Article | 19 March 2012 Paper

Development of Si-HM for NTD process

Wen Liang Huang, Yu Chin Huang, Bo Jou Lu, Yi Jing Wang, Yeh Sheng Lin, Chun Chi Yu, Satoshi Takeda, Yasunobu Someya, Makoto Nakajima, Yuta Kanno, Hiroyuki Wakayama, Rikimaru Sakamoto

Proceedings Volume 8325, 832523 (2012) https://doi.org/10.1117/12.916363

KEYWORDS: Lithography, Photoresist processing, Optical lithography, Semiconducting wafers, Diffusion, Manufacturing, System on a chip, Etching, Photomasks, Materials processing

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Proceedings Article | 19 March 2012 Paper

Spin-on-carbon-hardmask with high wiggling resistance

Yasunobu Someya, Tetsuya Shinjo, Keisuke Hashimoto, Hirokazu Nishimaki, Ryo Karasawa, Rikimaru Sakamoto, Takashi Matsumoto

Proceedings Volume 8325, 83250U (2012) https://doi.org/10.1117/12.916128

KEYWORDS: Etching, Resistance, System on a chip, Hydrogen, Carbon, Photomasks, Semiconducting wafers, Polymers, Lithography, Inspection

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Showing 5 of 8 publications

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