Dr. Yong-Jin Chun Profile

Dr. Yong-Jin Chun

at SAMSUNG Electronics Co Ltd

SPIE Involvement:

Author

Publications (8)

Proceedings Article | 4 December 2008 Paper

Optimization of mask manufacturing rule check constraint for model based assist feature generation

Seongbo Shim, Young-chang Kim, Yong-jin Chun, Seong-Woo Lee, Suk-joo Lee, Seong-woon Choi, Woo-sung Han, Seong-hoon Chang, Seok-chan Yoon, Hee-bom Kim, Won-tai Ki, Sang-gyun Woo, Han-gu Cho

Proceedings Volume 7140, 714030 (2008) https://doi.org/10.1117/12.804668

KEYWORDS: SRAF, Photomasks, Manufacturing, Semiconducting wafers, Image quality, Lithography, Optical proximity correction, Tolerancing, Critical dimension metrology, Optimization (mathematics)

Read Abstract +

SRAF (sub-resolution assist feature) generation technology has been a popular resolution enhancement technique in photo-lithography past sub-65nm node. It helps to increase the process window, and these are some times called ILT(inverse lithography technology). Also, many studies have been presented on how to determine the best positions of SRAFs, and optimize its size. According to these reports, the generation of SRAF can be formulated as a constrained optimization problem. The constraints are the side lobe suppression and allowable minimum feature size or MRC (mask manufacturing rule check). As we know, bigger SRAF gives better contribution to main feature but susceptible to SRAF side lobe issue. Thus, we finally have no choice but to trade-off the advantages of the ideally optimized mask that contains very complicated SRAF patterns to the layout that has been MRC imposed applied to it. The above dilemma can be resolved by simultaneously using lower dose (high threshold) and cleaning up by smaller MRC. This solution makes the room between threshold (side lobe limitation) and MRC constraint (minimum feature limitation) wider. In order to use smaller MRC restriction without considering the mask writing and inspection issue, it is also appropriate to identify the exact mask writing limitation and find the smart mask constraints that well reflect the mask manufacturability and the e-beam lithography characteristics. In this article, we discuss two main topics on mask optimizations with SRAF. The first topic is on the experimental work to find what behavior of the mask writing ability is in term of several MRC parameters, and we propose more effective MRC constraint for aggressive generation of SRAF. The next topic is on finding the optimum MRC condition in practical case, 3X nm node DRAM contact layer. In fact, it is not easy to encompass the mask writing capability for very complicate real SRAF pattern by using the current MRC constraint based on the only width and space restriction. The test mask for this experimental work includes not only typical split patterns but also real device patterns that are generated by in-house model-based assist feature generation tool. We analyzed the mask writing result for typical patterns and compared the simulation result, and wafer result for real device patterns.

Proceedings Article | 12 March 2008 Paper

Optical proximity correction for elongated contact-hole printing

Young-Chang Kim, Sangwook Kim, Sungsoo Suh, Yongjin Cheon, Sukjoo Lee, Junghyeon Lee, Seong-Woon Choi, Woosung Han, Sooryong Lee, Kyoil Koo

Proceedings Volume 6924, 69243Q (2008) https://doi.org/10.1117/12.773819

KEYWORDS: Optical proximity correction, Photomasks, Diffusion, Printing, Critical dimension metrology, Instrument modeling, Statistical modeling, Optical lithography, Semiconducting wafers, Polymers

Read Abstract +

Proceedings Article | 29 May 2007 Paper

Stray-light implementation in optical proximity correction (OPC)

Young-Chang Kim, Donghyun Kim, Insung Kim, Sangwook Kim, Sungsoo Suh, Yong-Jin Chun, Sukjoo Lee, Junghyeon Lee, Chang-Jin Kang, Jootae Moon, Kunal Taravade, Sooryong Lee

Proceedings Volume 6607, 66071M (2007) https://doi.org/10.1117/12.728969

KEYWORDS: Optical proximity correction, Stereolithography, Stray light, Convolution, Photomasks, Modulation transfer functions, Spatial light modulators, Semiconducting wafers, Image quality, Critical dimension metrology

Read Abstract +

Proceedings Article | 15 May 2007 Paper

Robust approach to determine the optimized illumination condition using process window analysis

Yong-Jin Chun, Sung-Woo Lee, Sooryong Lee, Young-Mi Lee, Sungsoo Suh, Suk-Joo Lee, Han-Ku Cho, Ho-Jin Park, Brad Falch

Proceedings Volume 6607, 660737 (2007) https://doi.org/10.1117/12.729026

KEYWORDS: Photomasks, Optical proximity correction, Nanoimprint lithography, Fiber optic illuminators, Image enhancement, Design for manufacturing, Critical dimension metrology, Semiconducting wafers, Lithography, Diffraction

Read Abstract +

Several criteria are applied to optimize the best illumination and bias condition for a layer. Normalized image log-slope (NILS) and mask error enhancement factor (MEEF) are promising candidates to simply decide the optimized condition. NILS represents imaging capability and MEEF represents the mask uniformity influence on wafer image. MEEF has inversely relationship with NILS, but the optimized point of NILS does not exactly coincide with that of MEEF. Besides NILS and MEEF, the depth of focus (DoF) is an important factor for defining the process margin. The process window (PW) is expressed by DoF and exposure Latitude (EL). PW is general parameter used to determine the best lithographic condition. Large EL can be obtained at the condition with good image performance. In order to include mask uniformity effect in PW analysis, the common PW overlapping the final layout with positive and negative biased layouts is adopted. Starting with the minimum NA, sigma and threshold, OPC is performed to satisfy the target layout using aerial image model, and the final OPCed layout is obtained. The positive and negative biased layouts are generated from the final OPCed layout. The bias limit is determined considering mask uniformity. The common PW obtained by overlapping the final layout with positive and negative biased layouts is calculated. Then, NA, sigma and threshold are increased until the maximum values are reached. The common PW at each NA, sigma and threshold value is obtained using the same flow sequence. Comparing among calculated PWs, the NA, sigma and threshold of the maximum PW can be chosen as the best illuminator and bias condition. In this paper, the optimized illumination and bias condition is determined using PW for 60 nm memory device. The process flow is implemented by an OPC tool. By using the OPC tool for the illuminator optimization, the actual layout and multiple monitoring points can be measured. In spite of a large number of calculations, the fast calculation speed can be obtained by using the distributed process.

Proceedings Article | 27 March 2007 Paper

Virtual OPC at hyper NA lithography

Sook Lee, Sang-Wook Kim, Yong-Jin Chun, Sung-Soo Suh, Yun-Kyeong Jang, Suk-Joo Lee, Sung-Woon Choi, Woo-Sung Han

Proceedings Volume 6520, 65203X (2007) https://doi.org/10.1117/12.711827

KEYWORDS: Optical proximity correction, Binary data, Photomasks, Chromium, Lithography, Data modeling, Computer simulations, Virtual reality, Scanners, Calibration

Read Abstract +

Proceedings Article | 26 March 2007 Paper

OPC in memory-device patterns using boundary layer model for 3-dimensional mask topographic effect

Young-Chang Kim, Insung Kim, JeongGeun Park, Sangwook Kim, Sungsoo Suh, Yongjin Cheon, Sukjoo Lee, Junghyeon Lee, Chang-Jin Kang, Jootae Moon, Jonathan Cobb, Sooryong Lee

Proceedings Volume 6520, 65200T (2007) https://doi.org/10.1117/12.711832

KEYWORDS: Optical proximity correction, 3D modeling, Photomasks, Near field, Polarization, Chromium, 3D image processing, Transmittance, Binary data, Optical lithography

Read Abstract +

Proceedings Article | 21 March 2007 Paper

Three-dimensional mask effect approximate modeling for sub-50-nm node device OPC

Sungsoo Suh, SukJoo Lee, Kyoung-yoon Back, Sook Lee, Youngchang Kim, Sangwook Kim, Yong-Jin Chun

Proceedings Volume 6521, 652103 (2007) https://doi.org/10.1117/12.711946

KEYWORDS: Photomasks, 3D modeling, Optical proximity correction, Molybdenum, Semiconducting wafers, Polarization, Critical dimension metrology, Diffraction, Instrument modeling, 3D image processing

Read Abstract +

In order to perform an optical proximity correction of memory device nodes below half-pitch 50nm, so called 3D mask effects need to be included in a model based OPC. As the mask pitch approaches wavelength of an optical system, and the angle of off-axis illumination becomes increasingly greater than normal incident beam, combined effects of transmission loss and mask induced polarization induces deviations from Kirchhoff thin mask approximation. Presently, just a handful of methods are being developed for commercial use in full-chip scale optical proximity correction: edge domain decomposition method (DDM), rim-type boundary layer and more recently, M3D model [1-6]. However, these methods currently require extensive modeling and proximity correction runtime although its methods are being continously improved for accuracy and speed. In this work, some results on an alternative approach to 3D mask modeling that is suitable for OPC are presented. Using modeling test pattern experimental data and FDTD rigorous simulation results, a thin mask approximation and alternative 3D mask approximate approaches are compared. And the results indicate improved model accuracy in terms of root mean square of 30% for a cross-pole and a dipole illumination conditions, respectively, while the OPC run-time remained similar. Furthermore, a flash memory gate-poly OPC results using the 3D mask approximate model indicates improved correlation to experimental results than a thin mask model at minimum resolution dense feature and narrow space regions. Thin mask and proposed approximate 3D mask models were calibrated for three differing illumination conditions: two X-dipole illuminations with Y-linear polarization and cross-pole quasar illumination with X&Y-linear polarization states. For each of the extreme off-axis illumination conditions, 3D mask approximate model developed for OPC indicated improved calibration results to both test pattern wafer images and rigorous simulation results. In addition, OPC layout image contours of 3D mask approximate model correlated better to wafer image than the thin mask approximation at nominal and defocus conditions.

Proceedings Article | 15 March 2006 Paper

Mask topography effect on OPC at hyper-NA lithography

Sook Lee, In-Sung Kim, Yong-Jin Chun, Sang-Wook Kim, Suk-Joo Lee, Sang-Gyun Woo, Han-Ku Cho, Joo-Tae Moon

Proceedings Volume 6154, 61541R (2006) https://doi.org/10.1117/12.655998

KEYWORDS: Optical proximity correction, Photomasks, 3D modeling, Binary data, 3D acquisition, Lithography, Data modeling, Diffusion, 3D image processing, Optimization (mathematics)

Read Abstract +

Showing 5 of 8 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years