KEYWORDS: Vertical cavity surface emitting lasers, Mirrors, Reflectivity, Resonators, Resistance, Near field diffraction, Transmittance, Lithium, Light sources, High power lasers
For the past years, ArF immersion has been employed as the major lithography tool in the foundry manufacturing to fabricate the patterns of minimum pitch and size. However, for semiconductor scaling beyond N7 the application of EUV lithography is considered to be crucially important to overcome the physical limitation of ArF immersion and to realize even smaller patterns. In the case of ArF photo processes, the best mask size for a specific pitch could be selected with the consideration of optical performances such as NILS, MEEF, etc. In contrast, for the EUV processes the optical and resist stochastic effect should also be taken into account as an important factor in deciding the best mask size. In this paper, we are going to discuss the dose and mask size optimization process for an DRAM contact hole layer with EUV lithography utilizing stochastic simulations; this contains also the stochastic response of the resist. In order to calibrate a predictive stochastic resist model, which is required for this application, measurements of the stochastic resist response are necessary. In addition, the systematic and stochastic errors of CD-SEM measurements have to be estimated. We will compare experimentally obtained NILS and MEEF to simulated results, which are in very good agreement. Also, we show a comparison of experimental and computational analysis of LCDU (Local CD Uniformity).
The band structure, density of states, optical properties, effective masses and loss function of AlxGa1−xAs and InyGa1−yAs were performed by the first-principles method within the local density approximation. The calculated direct band gap of the AlAs, Al0.5Ga0.5As, GaAs, In0.5Ga0.5As and InAs were 1.608 eV, 1.34eV, 1.02eV, 0.646eV and 0.316eV at G point, which were direct bandgap semiconductor materials. In addition, dielectric functions, the absorption function, refractive index, loss function and effective mass were analyzed in detail. The effective masses of AlxGa1−xAs and InyGa1−yAs were small, so they have high carrier mobility. These results make them to be promising candidates for future electronics.
A Ge-on-SOI uni-traveling carrier (UTC) photodetector was reported for high-power high-speed applications. The performances, in terms of dark-current, photocurrent responsivity and 3-dB bandwidth, were characterized for analog and coherent communications applications. The responsivity was 0.18 A/W at 1550 nm. The detector with a 40μmdiameter demonstrated an optical bandwidth of 2.72 GHz at -5V for 1550nm. The -1dB compression photocurrent at 1 GHz under -7V for 40μm-diameter device was about 16.24mA, the RF output power came to be 4.6 dBmw.
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