Photonic power converters (PPCs) are photovoltaic cells that convert monochromatic light into electric power. The impact of luminescent coupling (LC) on InGaAs-based PPCs is studied. Multi-junction PPCs are simulated using an experimentally validated drift-diffusion model, and the contribution of LC is quantified. Up to 85% of the photons emitted across the InGaAs layers are re-absorbed in the dual-junction device considered. This number increases to 96% when a back reflector is included due to improved light management. Interference effects produced by multiple reflections are examined as a function of the emission angle.
The standard method to measure subcell external quantum efficiency (EQE) for multi-junction photovoltaics (MJPV) uses light biasing to bring each subcell into current limitation. This method is suitable when each subcell absorbs in a different wavelength range. However, isolating individual subcells via light biasing is difficult for semitransparent subcells with overlapping absorptance, as in MJPV designed for monochromatic irradiance in power-by-light systems. For these cells, the standard measurement approach falls short. Here, we present an alternative technique that incorporates a negative bias voltage to overcome this limitation. We demonstrate subcell EQE measurements in MJPV devices with up to six GaAs subcells.
We have developed a machine learning empowered computational framework to facilitate design space exploration for optoelectronic devices. In this work, we apply dimensionality reduction and clustering machine learning algorithms to identify optimal ten-junction C-band photonic power converter (PPC) designs. We outline our framework, design optimization procedure, calibrated optoelectronic model, and experimental calibration devices. We report on top performing device designs for on-substrate and flat back-reflector architectures. We comment on the design sensitivity for these PPCs and on the applicability of dimensionality reduction and clustering algorithms to assist in optoelectronic device design.
KEYWORDS: Solar cells, Gallium arsenide, External quantum efficiency, Solar concentrators, Solar energy, Energy efficiency, Photovoltaics, Compound semiconductors, Group III-V semiconductors
III-V compound semiconductors provide a high degree of flexibility in bandgap engineering and can be realized through epitaxial growth in high quality. This enables versatile spectral matching of photovoltaic absorber materials as well as the fabrication of complex layer structures of vertically stacked subcells and tunnel junctions. This work presents progress in two fields of applications of III-V photovoltaics: concentrator solar cells and photonic power converters. We present latest results in advancing solar energy conversion efficiencies to 47.6% based on a wafer-bonded four-junction concentrator solar cell. Furthermore, we provide an overview of the latest development results regarding photonic power converters, showcasing several record devices. We briefly introduce a new metallization technique using electro-plated silver for handling high currents and first 10-junction InGaAs devices for optical telecommunication wavelengths. Overall, this paper highlights the potential of III-V compound semiconductors in achieving high efficiencies and spectral matching, offering promising prospects for future applications.
Photonic power converters designed to operate in the telecommunications O-band were measured under non-uniform 1319 nm laser illumination. Two device architectures were studied, based on lattice-matched InGaAsP on an InP substrate and lattice-mismatched InGaAs grown on GaAs using a metamorphic buffer. The maximum measured efficiencies were 52.9% and 48.8% for the lattice-matched and -mismatched designs respectively. Both 5.4-mm2 devices were insensitive to the incident laser spot size for input powers of < 250 mW and exhibited better performance for larger spot sizes with more uniform illumination profiles at higher powers.
Modeling single junction solar cells composed of III–V semiconductors such as GaAs with the effects of photon recycling yields insight into design and material criteria required for high efficiencies. For a thin-film single junction GaAs cell to reach 28.5% efficiency, simulation results using a recently developed model which accounts for photon recycling indicate that Shockley–Read–Hall (SRH) lifetimes of electrons and holes must be longer than 3 and 1 μs, respectively, in a 2-μm thin active region, and that the native substrate must be removed such that the cell is coupled to a highly reflective rear-side mirror. The model is generalized to account for luminescence coupling in tandem devices, which yields direct insight into the top cell’s nonradiative lifetimes. A heavily current mismatched GaAs/GaAs tandem device is simulated and measured experimentally as a function of concentration between 3 and 100 suns. The luminescence coupling increases from 14% to 33% experimentally, whereas the model requires increasing electron and hole SRH lifetimes to explain these results. This could be an indication of the saturating defects which mediate the SRH process. However, intermediate GaAs layers between the two subcells may also contribute to the luminescence coupling as a function of concentration.
Single junction photovoltaic devices composed of direct bandgap III-V semiconductors such as GaAs can exploit
the effects of photon recycling to achieve record-high open circuit voltages. Modeling such devices yields insight into the design
and material criteria required to achieve high efficiencies. For a GaAs cell to reach 28 % efficiency without a substrate, the
Shockley-Read-Hall (SRH) lifetimes of the electrons and holes must be longer than 3 s and 100 ns respectively in a 2 μm thin
active region coupled to a very high reflective (>99%) rear-side mirror. The model is generalized to account for luminescence
coupling in tandem devices, which yields direct insight into the top cell’s non-radiative lifetimes. A heavily current
mismatched GaAs/GaAs tandem device is simulated and measured experimentally as a function of concentration between 3
and 100 suns. The luminescence coupling increases from 14 % to 33 % experimentally, whereas the model requires an
increasing SRH lifetime for both electrons and holes to explain these experimental results. However, intermediate absorbing
GaAs layers between the two sub-cells may also increasingly contribute to the luminescence coupling as a function of
concentration.
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