Transient thermal stress analysis of interacting surface defects by digital photoelasticity

Wei-Chung Wang; Tsai-Lin Chen

doi:10.1117/12.56044

1 January 1992 Transient thermal stress analysis of interacting surface defects by digital photoelasticity

Wei-Chung Wang, Tsai-Lin Chen

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Optical Engineering, Vol. 31, Issue 1, (January 1992). https://doi.org/10.1117/12.56044

Abstract

The digital photoelastic technique was used to obtain an experimental solution of the transient thermal stresses of two interacting semielliptic surface defects due to a step temperature change at the free surface. A series of computer programs were developed on the digital photoelastic system to extract the maximum transient thermal stress on the defect boundary. By using a statistical analysis package, the variation of the maximum transient thermal stresses and their locations were correlated with the time, temperature difference, and geometrical parameters of the defects.

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Wei-Chung Wang and Tsai-Lin Chen "Transient thermal stress analysis of interacting surface defects by digital photoelasticity," Optical Engineering 31(1), (1 January 1992). https://doi.org/10.1117/12.56044

Published: 1 January 1992

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