Ultrafast laser-induced crystallization of amorphous silicon films

Tae Y. Choi; David J. Hwang; Constantine P. Grigoropoulos

doi:10.1117/1.1617312

1 November 2003 Ultrafast laser-induced crystallization of amorphous silicon films

Tae Y. Choi, David J. Hwang, Constantine P. Grigoropoulos

Optical Engineering, Vol. 42, Issue 11, (November 2003). https://doi.org/10.1117/1.1617312

Ultrashort pulsed laser irradiation is used to crystallize 100-nm amorphous-silicon (a-Si) films. The crystallization process is observed by time-resolved pump-and-probe reflection imaging in the range of 0.2 ps to 100 ns. The in-situ images, in conjunction with postprocessed scanning electron microscopy (SEM) and atomic force microscopy (AFM) mapping of the crystallized structure, provide evidence for nonthermal ultra-fast phase transition and subsequent surface-initiated crystallization.

©(2003) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Tae Y. Choi, David J. Hwang, and Constantine P. Grigoropoulos "Ultrafast laser-induced crystallization of amorphous silicon films," Optical Engineering 42(11), (1 November 2003). https://doi.org/10.1117/1.1617312

Published: 1 November 2003

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available