Materials, Photonic Devices, and Sensors

Simulated characteristics of a heterojunction phototransistor with Ge1-xSnx alloy as base

[+] Author Affiliations
Dur Vesh Kumar, Ankit Kumar Pandey, Rikmantra Basu

National Institute of Technology Delhi, Department of Electronics and Communication Engineering, A-7, Institutional Area, IAMR Campus, Narela 110040, New Delhi, India

Anuj K. Sharma

National Institute of Technology Delhi, Department of Applied Sciences, A-7, Institutional Area, IAMR Campus, Narela 110040, New Delhi, India

Opt. Eng. 55(12), 127103 (Dec 23, 2016). doi:10.1117/1.OE.55.12.127103
History: Received August 13, 2016; Accepted December 2, 2016
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Abstract.  Groups III-V compound semiconductors and their alloys are the main photodetecting elements for the entire fiber optic telecommunication band. However, the recent successful growth of Ge1-xSnx alloy on Ge virtual substrates on Si platform makes the group IV alloys a potential competitor. Ge1-xSnx alloy shows direct band gap and has an absorption coefficient almost 10 times higher than that of Ge. The photonic devices are complementary metal–oxide–semiconductor compatible. We have considered an n-Ge/p+-Ge1-xSnx/n-Ge1-xSnx heterojunction phototransistor (HPT) and studied the variations of terminal currents by considering the Gummel Poon model of HPT, and values of optical and current gains, photocurrent, and responsivity have been obtained. The performance of the device as a photodetector at fiber optic communication wavelengths seems quite encouraging to justify the use of GeSn-based HPTs as a replacement of III-IV semiconductor-based photodetectors.

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© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

Dur Vesh Kumar ; Ankit Kumar Pandey ; Rikmantra Basu and Anuj K. Sharma
"Simulated characteristics of a heterojunction phototransistor with Ge1-xSnx alloy as base", Opt. Eng. 55(12), 127103 (Dec 23, 2016). ; http://dx.doi.org/10.1117/1.OE.55.12.127103


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