High-power 685nm laser diode array with 300W output power and 40% conversion efficiency

Wei Xia; Zhen Zhu; Beichao Kai; Shuang Yao; Xiangang Xu

doi:10.1117/12.2537578

19 November 2019 High-power 685nm laser diode array with 300W output power and 40% conversion efficiency

Wei Xia, Zhen Zhu, Beichao Kai, Shuang Yao, Xiangang Xu

Proceedings Volume 11182, Semiconductor Lasers and Applications IX; 111820W (2019) https://doi.org/10.1117/12.2537578
Event: SPIE/COS Photonics Asia, 2019, Hangzhou, China

Abstract

High power AlGaInP laser diodes (LDs) and bars emitting at about 685 nm have been fabricated. The epitaxial structures, including the AlInP cladding layer, asymmetric waveguide and single compressive-strained quantum well, were designed to optimize the thermal performance. The transparent window structure formed by Zn diffusion was employed to increase the output power of AlGaInP LDs. A maximum power of 4.9 W was realized for the single emitter LDs without catastrophic optical damage. Using micro-channel heat sinks, an array stacked with six 1-cm bars showed an output power of more than 300 W with 40% conversion efficiency.

Citation Download Citation

Wei Xia, Zhen Zhu, Beichao Kai, Shuang Yao, and Xiangang Xu "High-power 685nm laser diode array with 300W output power and 40% conversion efficiency", Proc. SPIE 11182, Semiconductor Lasers and Applications IX, 111820W (19 November 2019); https://doi.org/10.1117/12.2537578

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