Thermal stability of Mo/Si multilayers

Robert S. Rosen; Michael A. Viliardos; M. E. Kassner; Daniel Gorman Stearns; Stephen P. Vernon

doi:10.1117/12.51281

1 January 1992 Thermal stability of Mo/Si multilayers

Robert S. Rosen, Michael A. Viliardos, M. E. Kassner, Daniel Gorman Stearns, Stephen P. Vernon

Proceedings Volume 1547, Multilayer Optics for Advanced X-Ray Applications; (1992) https://doi.org/10.1117/12.51281
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

The thermal stability of Mo/Si multilayers for x-ray mirror applications was investigated by annealing studies at relatively low temperatures for various times. The as-deposited and annealed multilayers were examined using conventional small and large angle x-ray diffraction, normal incidence x-ray reflectance measurements using a synchrotron source, selected area electron diffraction, and high-resolution electron microscopy. The as-deposited structure consists of pure layers of crystalline Mo and amorphous Si separated by thin regions of amorphous Mo-Si. At temperatures between 200 - 400 degree(s)C the amorphous Mo-Si interlayers grow and hexagonal MoSi2 forms by a thermally activated process(es) and the bilayer spacing and x-ray reflectivity decrease. A determination of the effective activation energy of the process(es) suggests long-term stability at the mirror operating temperature, although additional low temperature testing is warranted.

Citation Download Citation

Robert S. Rosen, Michael A. Viliardos, M. E. Kassner, Daniel Gorman Stearns, and Stephen P. Vernon "Thermal stability of Mo/Si multilayers", Proc. SPIE 1547, Multilayer Optics for Advanced X-Ray Applications, (1 January 1992); https://doi.org/10.1117/12.51281

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