Some aspects of thin-film ellipsometry

Eugene G. Bortchagovsky

doi:10.1117/12.191977

31 October 1994 Some aspects of thin-film ellipsometry

Eugene G. Bortchagovsky

Proceedings Volume 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1994) https://doi.org/10.1117/12.191977
Event: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics: International Workshop, 1993, Kiev, Ukraine

Abstract

Ellipsometry is well known to be a very powerful technique for investigation of films, surfaces, interfaces and so on. Thanks to its principals and high quality of standard polarization prisms, ellipsometry has a sensitivity about one hundred's part of monolayer or some hundred's parts of angstrom if this sensitivity is recalculated for the thickness measurements. This very convenient and sensitive method of investigations also is very simple in realization. Unfortunately, ellipsometry is an indirect method. It may be the best method for investigations of little changes in well defined systems, but obtaining the optical parameters of an investigated system from the measured ellipsometrical angles (psi) and (delta) can be very difficult. Thus all results of ellipsometrical measurements have to be interpreted on the basis of some physical model and obtained optical parameters are only the parameters of the concrete chosen model. Difficulties in investigations of thin films and sub-monolayer coverings are: the nonuniformity of a substrate, the choice of an appropriate model for having the meaningful physical description, and a selection of measurement conditions for obtaining all parameters of this model. This article does not pretend to review all of the problems of the thin films ellipsometry and does not have a somehow full list of references; it is only a short look over some aspects of the ellipsometry of thin films.

Citation Download Citation

Eugene G. Bortchagovsky "Some aspects of thin-film ellipsometry", Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); https://doi.org/10.1117/12.191977

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KEYWORDS

Thin films

Ellipsometry

Dielectrics

Refractive index

Polarizability

Reflection

Silicon

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