Photoemf of hot carriers in nonuniform GaAs

Steponas P. Asmontas; Jonas Gradauskas; Dalius Seliuta; A. Silenas; Edmundas Sirmulis

doi:10.1117/12.266815

6 February 1997 Photoemf of hot carriers in nonuniform GaAs

Steponas P. Asmontas, Jonas Gradauskas, Dalius Seliuta, A. Silenas, Edmundas Sirmulis

Proceedings Volume 2968, Optical Organic and Semiconductor Inorganic Materials; (1997) https://doi.org/10.1117/12.266815
Event: International Conference on Advanced Optical Materials and Devices, 1996, Riga, Latvia

Abstract

We report the results of a study of photovoltage which is generated on p-n and l-h GaAs structures under pulsed infrared laser excitation. The hot carrier photocurrent reaches its maximum value at bias voltage related to potential barrier height of p-n junction. We demonstrate that the photoresponse consists of fast and slow components which result from free-carrier and crystal lattice heating, respectively. The obtained results indicate that nonuniform GaAs structures can be used for fabrication of fast detectors based on free-carrier heating by infrared light.

Citation Download Citation

Steponas P. Asmontas, Jonas Gradauskas, Dalius Seliuta, A. Silenas, and Edmundas Sirmulis "Photoemf of hot carriers in nonuniform GaAs", Proc. SPIE 2968, Optical Organic and Semiconductor Inorganic Materials, (6 February 1997); https://doi.org/10.1117/12.266815

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