Optimization of 200-W excimer laser for TFT annealing

V. Pfeufer; Frank Voss; Bruno Becker-de Mos; Uwe Stamm; Heinrich Endert; Dirk Basting

doi:10.1117/12.270097

31 March 1997 Optimization of 200-W excimer laser for TFT annealing

V. Pfeufer, Frank Voss, Bruno Becker-de Mos, Uwe Stamm, Heinrich Endert, Dirk Basting

Proceedings Volume 2992, Excimer Lasers, Optics, and Applications; (1997) https://doi.org/10.1117/12.270097
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Polycrystalline-silicon TFT technology is opening the door to highly reliable, high-resolution, high-performance, large AMLCDs that will be inevitable for HDTV and other advanced applications. For formation of polycrystalline silicon, excimer laser annealing has shown to be superior to all other techniques with respect to quality, reliability and economy. In excimer laser annealing a high-power laser beam is scanned over the surface of the substrate, coated with amorphous silicon. The amorphous silicon is heated up within a few nanoseconds, melts and recrystallizes into polycrystalline silicon. The pronounced nonlinearity of the annealing process, the high quality requirements and the high process speeds in production lines make high demands on the laser beam parameters such as energy stability and beam uniformity, and on laser output power. This presentation will discuss the results of recent development in high-power excimer lasers for annealing, and their impact on production of AMLCDs.

Citation Download Citation

V. Pfeufer, Frank Voss, Bruno Becker-de Mos, Uwe Stamm, Heinrich Endert, and Dirk Basting "Optimization of 200-W excimer laser for TFT annealing", Proc. SPIE 2992, Excimer Lasers, Optics, and Applications, (31 March 1997); https://doi.org/10.1117/12.270097

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