Development Status Of Silicon IR detectors

Nathan Sclar

doi:10.1117/12.935736

30 November 1983 Development Status Of Silicon IR detectors

Nathan Sclar

Proceedings Volume 0409, Technical Issues in Infrared Detectors and Arrays; (1983) https://doi.org/10.1117/12.935736
Event: 1983 Technical Symposium East, 1983, Arlington, United States

Abstract

The present performance status of silicon IR detectors, including spectral response, detectivity and operational temperature for use in the 2-2.5, 3-5 and 8-14 pm principal windows of the atmosphere, are summarized and discussed. In general, all of the detectors are background radiation noise limited below some temperature which is a function of the background flux density. This temperature is tabulated for the detectors for a background provided by a 30° field of view of the 300K background. These temperatures are in general lower than required for equivalent intrinsic detectors, but the special properties of silicon when they are mated to CCDs, particularly for the longer wavelengths, including the electrical impedance and the character of the noise may offset the temperature advantage of the intrinsics when used in imaging arrays.

Citation Download Citation

Nathan Sclar "Development Status Of Silicon IR detectors", Proc. SPIE 0409, Technical Issues in Infrared Detectors and Arrays, (30 November 1983); https://doi.org/10.1117/12.935736

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