New current-controlled very high value floating CMOS resistor

Said F. Al-Sarawi

doi:10.1117/12.449171

21 November 2001 New current-controlled very high value floating CMOS resistor

Said F. Al-Sarawi

Proceedings Volume 4591, Electronics and Structures for MEMS II; (2001) https://doi.org/10.1117/12.449171
Event: International Symposium on Microelectronics and MEMS, 2001, Adelaide, Australia

Abstract

A new current controlled very high value resistor is presented and discussed. The new very high value floating resistor is built using a new topology that converts a grounded resistor or conductance to floating one. The output conductance of two matched transistors in the saturation region of operation is utilized for the resistor implementation. Hence, resistance value in the range of G(Omega) is achievable through a reasonable bias current in the range of 500 nA with small silicon area. The linearity of the new resistor is less than +/- 1 percent (THD) for a 2 V_pp input signal in a 5 volt 1.2micrometers CMOS technology. The resistor is useful in the design of a very low frequency bandpass filter for artificial insect vision chip and pacemaker applications.

Citation Download Citation

Said F. Al-Sarawi "New current-controlled very high value floating CMOS resistor", Proc. SPIE 4591, Electronics and Structures for MEMS II, (21 November 2001); https://doi.org/10.1117/12.449171

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