On-wafer measurements and characterization of poly-si resistors for evaluation of selected CMOS manufacturing processes

Grzegorz Głuszko; Daniel Tomaszewski; Jolanta Malesińska; Krzysztof Kucharski

doi:10.1117/12.2031057

25 July 2013 On-wafer measurements and characterization of poly-si resistors for evaluation of selected CMOS manufacturing processes

Grzegorz Głuszko, Daniel Tomaszewski, Jolanta Malesińska, Krzysztof Kucharski

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Proceedings Volume 8902, Electron Technology Conference 2013; 89020K (2013) https://doi.org/10.1117/12.2031057
Event: Electron Technology Conference 2013, 2013, Ryn, Poland

Abstract

In this study, measurements of resistance of polysilicon resistors with different widths have been done over the whole surface of the SOI wafers. The obtained results have been used to determine changes in their width, which is equivalent with shortening of the channel length in the photoli-thography process. By studying the elements distributed across the wafers it was possible to assess the homogeneity of the MOS transistor gate manufacturing process. the abstract two lines below author names and addresses.

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Grzegorz Głuszko, Daniel Tomaszewski, Jolanta Malesińska, and Krzysztof Kucharski "On-wafer measurements and characterization of poly-si resistors for evaluation of selected CMOS manufacturing processes", Proc. SPIE 8902, Electron Technology Conference 2013, 89020K (25 July 2013); https://doi.org/10.1117/12.2031057

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KEYWORDS

Resistors

Semiconducting wafers

Resistance

Manufacturing

Transistors

CMOS technology

Molybdenum

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