Hydrogen Implantation Into Gallium Arsenide: Range And Damage Distributions

J. M. Zavada; H. A. Jenkinson; R. G. Wilson; D. K. Sadana

doi:10.1117/12.941350

31 May 1984 Hydrogen Implantation Into Gallium Arsenide: Range And Damage Distributions

J. M. Zavada, H. A. Jenkinson, R. G. Wilson, D. K. Sadana

Proceedings Volume 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials; (1984) https://doi.org/10.1117/12.941350
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

This paper addresses the depth distributions of implanted hydrogen (¹H) in n-type GaAs and the asso-ciated damage in the crystalline material. Secondary ion mass spectrometry measurements are used to demonstrate the presence of hydrogen atoms in the implanted material and to obtain the range profiles of these atoms for fluences of 5E14 and 5E15 cm-2. The nature and the distribution of the resulting lattice damage are studied using transmission electron microscopy. Elevated temperature implants are shown to alter the range profiles and to increase the TEM-visible damage.

Citation Download Citation

J. M. Zavada, H. A. Jenkinson, R. G. Wilson, and D. K. Sadana "Hydrogen Implantation Into Gallium Arsenide: Range And Damage Distributions", Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); https://doi.org/10.1117/12.941350

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