Formation of polycrystalline Si film by pulsed discharge sputtering in pure hydrogen

Mikio Noda

doi:10.1117/12.514557

14 October 2003 Formation of polycrystalline Si film by pulsed discharge sputtering in pure hydrogen

Mikio Noda

Proceedings Volume 5062, Smart Materials, Structures, and Systems; (2003) https://doi.org/10.1117/12.514557
Event: Smart Materials, Structures, and Systems, 2002, Bangalore, India

Abstract

Polycrystalline Si (poly-Si) films can be deposited at low substrate temperature by means of a pulsed discharge sputtering of a Si wafer target in pure hydrogen at high gas pressure of about 13 Torr, and microstructures of the films are investigated by using transmission electron microscope. Stable discharge at high gas pressure become possible by the pulsed discharge method. The discharge and non-discharge time at each period of the pulse in the present experiments are 0.35 and 2 ms, respectively. When the deposition time is 0.5 h, both an amorphous SiO₂ parent phase and poly-Si grains are exist in the film, and these structures changes to the poly-Si film at longer deposition time due to not only growth and aggregation of the crystalline grains but also structural change of the parent phase. The film is not deposited when the sputtering is performed with an argon gas instead of the hydrogen. These results suggest that the poly-Si is grown by the reactions of SiH_x species formed by reactions between the Si target and the atomic hydrogen and elimination of amorphous components by atomic hydrogen.

Citation Download Citation

Mikio Noda "Formation of polycrystalline Si film by pulsed discharge sputtering in pure hydrogen", Proc. SPIE 5062, Smart Materials, Structures, and Systems, (14 October 2003); https://doi.org/10.1117/12.514557

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