Novel approaches to semiconductor lasers

Nikolai N. Ledentsov; Vitaly A. Shchukin

doi:10.1117/12.481006

29 August 2002 Novel approaches to semiconductor lasers

Nikolai N. Ledentsov, Vitaly A. Shchukin

Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.481006
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China

Abstract

Modern trends in design of semiconductor lasers are reviewed. In one novel design, light propagates at some angle with respect to multilayer interference mirrors (MIRs), and the MIRs and the cavity are optimized for the tilted photon propagation. "Tilted cavity" laser (TCL) gives wavelength-stabilized operation in edge and (or) in surface direction and does not require materials having large difference in refractive indices. In a different concept, a high-order mode filtering in structures with periodically modulated refractive index containing a "defect" allows realization of a stable narrow beam divergence fundamental mode lasing in both edge-emitters and vertical-cavity surface-emitting lasers (VCSELs). Using of electrooptical modulators based on quantum confined Stark effect in VCSELs and TCLs allows a significant wavelength tuning range, ultrahigh-speed operation and direct wavelength adjustment to resonant cavity photodiode (RCPD) or tunable RCPD. Different types of tunable semiconductor optical amplifiers, switches, filers may become possible. New generations of cost-effective intelligent telecom systems with direct, ultrafast and wavelength adjustable connection between consumer devices and the storage or processing cites may be realized.

Citation Download Citation

Nikolai N. Ledentsov and Vitaly A. Shchukin "Novel approaches to semiconductor lasers", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); https://doi.org/10.1117/12.481006

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