Modeling type-II InAs/GaSb superlattices using empirical tight-binding method: new aspects

Yajun Wei; Manijeh Razeghi; Gail J. Brown; Meimei Z. Tidrow

doi:10.1117/12.528297

6 July 2004 Modeling type-II InAs/GaSb superlattices using empirical tight-binding method: new aspects

Yajun Wei, Manijeh Razeghi, Gail J. Brown, Meimei Z. Tidrow

Proceedings Volume 5359, Quantum Sensing and Nanophotonic Devices; (2004) https://doi.org/10.1117/12.528297
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

The recent advances in the experimental work on the Type II InAs/GaSb superlattices necessitate a modeling that can handle arbitrary layer thickness as well as different types of interfaces in order to guide the superlattice design. The empirical tight-binding method (ETBM) is a very good candidate since it builds up the Hamiltonian atom by atom. There has been a lot of research work on the modeling of Type II InAs/GaSb superlattices using the ETBM. However, different groups generate very different accuracy comparing with experimental results. We have recently identified two major aspects in the modeling: the antimony segregation and the interface effects. These two aspects turned out to be of crucial importance governing the superlattice properties, especially the bandgap. We build the superlattice Hamiltonian using antimony segregated atomic profile taking into account the interface. Our calculations agree with our experimental results within growth uncertainties. In addition we introduced the concept of Ga_xIn_1-x type interface engineering, which will add another design freedom especially in the mid-wavelength infrared range (3~7 μm) in order to reduce the lattice mismatch.

Citation Download Citation

Yajun Wei, Manijeh Razeghi, Gail J. Brown, and Meimei Z. Tidrow "Modeling type-II InAs/GaSb superlattices using empirical tight-binding method: new aspects", Proc. SPIE 5359, Quantum Sensing and Nanophotonic Devices, (6 July 2004); https://doi.org/10.1117/12.528297

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