Three-dimensional structuring of silicon for photonic crystals with complete photonic bandgaps

Sven Matthias; Frank Mueller; Ulrich M. Goesele

doi:10.1117/12.590551

13 April 2005 Three-dimensional structuring of silicon for photonic crystals with complete photonic bandgaps

Sven Matthias, Frank Mueller, Ulrich M. Goesele

Proceedings Volume 5733, Photonic Crystal Materials and Devices III; (2005) https://doi.org/10.1117/12.590551
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

The fabrication of three-dimensional photonic bandgap materials and the controlled incorporation of point, linear and planar defects into these crystals is a major challenge in materials research today. We show in this report that these purposes can be achieved by photoelectrochemical etching of lithographically prestructured silicon. Our advanced etching method allows the fabrication of three-dimensional photonic crystals with simple cubic symmetry. The performed calculations suggest complete bandgaps of 5% for the realized bulk structures. By lithographic prestructuring vertical line and planar defects can be induced, whereas horizontal planar defects can be created during the etching step. By combining both structuring techniques point defects can be fabricated.

Citation Download Citation

Sven Matthias, Frank Mueller, and Ulrich M. Goesele "Three-dimensional structuring of silicon for photonic crystals with complete photonic bandgaps", Proc. SPIE 5733, Photonic Crystal Materials and Devices III, (13 April 2005); https://doi.org/10.1117/12.590551

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