GaSb film growth on GaAs substrate by MBE

Lin Li; Guo-jun Liu; Yong Wang; Mei Li

doi:10.1117/12.635146

5 December 2005 GaSb film growth on GaAs substrate by MBE

Lin Li, Guo-jun Liu, Yong Wang, Mei Li

Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 602038 (2005) https://doi.org/10.1117/12.635146
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China

Abstract

The GaSb characteristics grown by molecular beam epitaxy (MBE) on GaAs substrates was reported. The abruptness of the interfaces, the degree of intermixing and the anion incorporation greatly affect the material quality. The RHEED patterns provide information on the surface structure and morphology of the sample and dictate surface reconstruction, accumulation and segregation. The structure parameters of samples are obtained from the rocking curve. The first and second satellite peaks appear around the main 0th-order peak. The experimental and simulated results of samples A and B with x-ray rocking curves show there is a GaAsSb layer because of As-for-Sb exchange at the GaSb/GaAs interface.

Citation Download Citation

Lin Li, Guo-jun Liu, Yong Wang, and Mei Li "GaSb film growth on GaAs substrate by MBE", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 602038 (5 December 2005); https://doi.org/10.1117/12.635146

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