Prof. Hong Liu Profile

Prof. Hong Liu

at Shandong Univ

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Proceedings Article | 12 April 2023 Paper

Large-area growth of high-quality transition metal dichalcogenides for optoelectronics and electronics

Jinbo Pang, Chongyang Hou, Hong Liu

Proceedings Volume 12565, 125652Z (2023) https://doi.org/10.1117/12.2662939

KEYWORDS: Metals, Transition metals, Electronics, Chemical vapor deposition, Oxides, Optoelectronics, Photodetectors, Platinum, Chalcogenides, Tungsten

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The electronic and optoelectronic properties of 2D materials and their stacking heterostructures have inspired enormous interests. WSe₂, as a p-type semiconductor, represents a foremost building block in the p-n junctions. WSe₂ shall possesses the features of large area, homogeneity, and precise layer control. To date, there is yet an ideal synthesis method ever reported. First, we present a facile approach to prepare high-quality wafer-scale homogenous WSe₂ full films. In brief, we first deposit a thin layer of metal and then do the selenization. We can control the film thickness of WSe₂ in a chemical equilibrium environment. Second, we present a facile approach to prepare high-quality large-area homogenous WSe₂ full films. In brief, we developed a pre-seeding strategy for depositing W-containing precursors over dielectric substrates, which form well-distributed particles as seeding center. Upon the salt-assisted sublimation of tungsten oxides, the WSe₂ forms over the seeded substrates (at high temperature) in the Se-rich atmosphere. Eventually the high quality of the synthetic film has been reflected on the high performances of photodetectors and field-effect transistors. Our finding may pave the way of wafer scale integration of transition metal dichalcogenides in the integrated flexible electronics.

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