In this paper, a novel millimeter-wave silicon-based broadband dielectric resonator antenna (DRA) is proposed, and the influences of the silicon’s resistivity on the DRA and patch antenna are analyzed and compared. Based on the microsystem integration technology, a silicon-based DRA fed by a rectangular slot etched on the glass substrate is designed. The antenna operates in the millimeter-wave band. Its -10 dB impedance bandwidth is 18.5% (46.5-56 GHz), with a maximum in-band gain of 6.44dBi and a 3-dB gain fluctuation bandwidth of 14.7% (46.5-53.9 GHz). By comparing and analyzing the influences of different resistivity of the silicon on the performance of DRA and patch antenna, it is found that silicon-based DRA has relatively lower requirements on silicon resistivity. In addition, compared with the same size of silicon-based patch antenna, the operating bandwidth and realized gain of the proposed DRA have obvious advantages. The design of this paper lays a foundation for the application of on-chip silicon-based dielectric resonators.
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