The microcrystalline silicon films in the phase transition regime from amorphous to microcrystalline were fabricated by
microwave electron-cyclotron-resonance chemical vapor deposition (MWECR CVD) system. The influence of
deposition temperature and deposition pressure on the structure and electrical properties of microcrystalline silicon films
was investigated. It is shown that the films in the phase transition regime from amorphous to microcrystalline are easier
to fabricate under the condition of lower deposition pressure and higher substrate temperature. For example, the films in
the phase transition regime whose crystalline volume fraction is about 30 %, were deposited at substrate temperature of
170 °C and deposition pressure of 0.7 Pa. The films' μτ product is about the order of magnitude of 10-5, whose
magnitude is two order higher than that of amorphous silicon films, and their photosensitivity is about 103~104.
Therefore, having both high stability and excellent optoelectric properties of the high-quality and device grade film, it is
suitable to fabricate the intrinsic materials for amorphous silicon based solar cells.
The pyramid-like texture ZnO thin films were usually synthesized by MOCVD or etching the as-prepared RF magnetron
sputtering films, and the expensive equipment cost and uncontrollable acid etching, respectively are two main
disadvantages both the MOCVD and RF magnetron sputtered. In this paper, the pyramid-like texture ZnO thin films
were prepared through a low-cost two-step process, firstly, a seed ZnO:Al layer was coated on the quartz substrates by
sol-gel method and subsequently a ZnO thin film was fabricated by RF magnetron sputtered. It is shown from the XRD
and SEM results that the ZnO thin film has (101) preferential orientation with a pyramid-like texture. According to the
measurement results of ZnO films' resistivity and UV-Visible transmission spectra, the lower resistivity of 10-3 Ωcm
and optical transmission of higher than 80 % were obtained for these ZnO films. It has shown that the pyramid-like ZnO
thin film is a potential transparent conductive film used in amorphous silicon solar cell for front electrode, and the cell
performance is comparable advantages for that of ITO conductive film.
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