Fundamental features of a Pd-based contact on p-GaN

Iryna Levchenko; Eliana Kaminska; Szymon Grzanka; Serhii Kryvyi; Piotr Perlin

doi:10.1117/12.2649230

21 March 2023 Fundamental features of a Pd-based contact on p-GaN

Iryna Levchenko, Eliana Kaminska, Szymon Grzanka, Serhii Kryvyi, Piotr Perlin

Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2649230
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

Realization of ohmic contacts to p-GaN-based optical devices is challenging because of the absence of metals with sufficiently large work function, good adhesion and thermal stability. In order to to extend the lifetime of optoelectronic devices is necessary to increase the perfection of metal/semiconductor system. The technological aspects of contact formation should be understand on the atomic scale. In present work we will discuss the details of Pd-based/p-GaN system characteristics in terms of atomic structure and correlations with electrical properties of these contact layers after different type of annealing parameters (temperature, atmosphere) in order to reduce the contact resistivity and improve metallization stability.

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Citation Download Citation

Iryna Levchenko, Eliana Kaminska, Szymon Grzanka, Serhii Kryvyi, and Piotr Perlin "Fundamental features of a Pd-based contact on p-GaN", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2649230

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KEYWORDS

Metals

Resistance

Interfaces

Light emitting diodes

Optical components

Optoelectronic devices

Oxidation

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