Elevated Temperature n+-p hg0.8Cd0.2-Te Photodiodes For Moderate Bandwidth Infrared Heterodyne Applications

J. F. Shanley; C. T. Flanagan; M. B. Reine

doi:10.1117/12.958754

22 August 1980 Elevated Temperature n⁺-p Hg_0.8Cd_0.2Te Photodiodes For Moderate Bandwidth Infrared Heterodyne Applications

J. F. Shanley, C. T. Flanagan, M. B. Reine

Author Affiliations +

Proceedings Volume 0227, CO2 Laser Devices and Applications; (1980) https://doi.org/10.1117/12.958754
Event: 1980 Technical Symposium East, 1980, Washington, D.C., United States

Abstract

This paper presents the results of the first CO2 laser heterodyne measurements performed on boron implanted n+-p Hg_0.8Cd_0.2Te photodiodes. The measured data shows that this type of device structure is capable, of achieving bandwidths -20 of approximately 475 to 725 MHz and noise equivalent powers of 3.2 x 10-20 at 77 K and 1.0 x 10-19 W/Hz at 145 K.

Citation Download Citation

J. F. Shanley, C. T. Flanagan, and M. B. Reine "Elevated Temperature n⁺-p Hg_0.8Cd_0.2Te Photodiodes For Moderate Bandwidth Infrared Heterodyne Applications", Proc. SPIE 0227, CO2 Laser Devices and Applications, (22 August 1980); https://doi.org/10.1117/12.958754

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