Presentation + Paper
26 March 2020 All-new nickel-based Metal Core Organic Cluster (MCOC) resist for N7+ node patterning
Author Affiliations +
Abstract
The increase in the demand of sub-10 nm feature size in semiconductor industries necessitates a new kind of resist material development which can absorb a large fraction of irradiation and retains the small size cluster distribution (1-2 nm). In this context, we developed a novel nickel-based organo-metallic cluster comprising high optical density inorganic nickel as metal building units (MBU), and 3,3-Dimethylacrylic acid as an organic ligand to form Ni-DMA clusters. The synthesised clusters have ~1 nm size with narrow size distribution. The formulated resist shows the negative tone pattern when exposed with a focused helium ion (He+) beam and e-beam. The high-resolution line patterns of ~8 nm at the dose of ~40 μC cm-2 were obtained with the minimum line edge roughness (LER) and line width roughness (LWR) of 2.16 ± 0.04 nm and 3.03 ± 0.06 nm, respectively.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Satinder K. Sharma, Rudra Kumar, Manvendra Chauhan, Mohamad G. Moinuddin, Jerome Peter, Subrata Ghosh, Chullikkattil P. Pradeep, and Kenneth E. Gonsalves "All-new nickel-based Metal Core Organic Cluster (MCOC) resist for N7+ node patterning", Proc. SPIE 11326, Advances in Patterning Materials and Processes XXXVII, 1132604 (26 March 2020); https://doi.org/10.1117/12.2552189
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Electron beam lithography

Metals

Nickel

Etching

Line edge roughness

Line width roughness

Silicon

RELATED CONTENT


Back to Top