Jonathan Schusterhttps://orcid.org/0000-0002-0835-5733,1,2 Anand V. Sampath,1 Jeremy L. Smith,1 Stephen B. Kelley,1 Gregory A. Garrett,1 Daniel B. Habersat,1 Michael A. Derenge,1 Michael Wraback,1 Dina M. Bower,3,4 Shahid Aslam,4 Tilak Hewagama4
1DEVCOM Army Research Lab. (United States) 2Boston Univ. (United States) 3Univ. of Maryland (United States) 4NASA Goddard Space Flight Ctr. (United States)
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
High sensitivity near-ultraviolet (NUV) avalanche photodiodes operating at wavelengths longer than 300 nm are useful for various applications, including surface exploration of Ocean Worlds and other planetary bodies via Raman spectroscopy. 4H-SiC has long been established as a proven UV detector technology; however, the responsivity of 4H–SiC avalanche photodiodes (APDs) diminishes dramatically at wavelengths longer than ≈ 280 nm due to its weak absorption at wavelengths approaching the indirect bandgap. The authors will present on the design and optimization of 4H-SiC separate absorption, charge and multiplication (SACM) APDs for broadband absorption from 266 to 340 nm.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Jonathan Schuster, Anand V. Sampath, Jeremy L. Smith, Stephen B. Kelley, Gregory A. Garrett, Daniel B. Habersat, Michael A. Derenge, Michael Wraback, Dina M. Bower, Shahid Aslam, Tilak Hewagama, "Design and optimization of NUV-enhanced 4H-SiC separate-absorption-charge-multiplication avalanche photodiodes," Proc. SPIE 12415, Physics and Simulation of Optoelectronic Devices XXXI, 1241509 (10 March 2023); https://doi.org/10.1117/12.2649236