Paper
13 May 2010 Sensitive and stable SiC APD for UV detection
Susan M. Savage, Adolf Schöner, Ingemar Petermann, Mietek Bakowski
Author Affiliations +
Abstract
This paper describes a novel design for an avalanche photodiode based on silicon carbide material. The design is based on a SAM-APD, with the novel feature of a field-stopping layer with limited extension only to the anode edge. Simulation shows that avalanche multiplication is achieved only in the central region of the device, thus enabling stable performance, when this novel structure is coupled with junction termination. Also, increased sensitivity is enabled by the achievement of a rectangular field distribution and full depletion of the absorption region by the onset of avalanche multiplication. The design has been experimentally verified, with the demonstration of low leakage current and a sharp, stable avalanche breakdown point around 120V. Optical responsivity to radiation of wavelength 200 to 400 nm is shown to increase with increasing applied reverse bias. Comparison with simulation shows that this is probably limited by reflection of the incident radiation at the device surface and by recombination effects.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Susan M. Savage, Adolf Schöner, Ingemar Petermann, and Mietek Bakowski "Sensitive and stable SiC APD for UV detection", Proc. SPIE 7726, Optical Sensing and Detection, 772622 (13 May 2010); https://doi.org/10.1117/12.854613
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Silicon carbide

Absorption

Ultraviolet radiation

Avalanche photodetectors

Doping

Ultraviolet detectors

Avalanche photodiodes

RELATED CONTENT


Back to Top