Integrated silicon T centers for quantum technologies

D. B. Higginbottom; A. DeAbreu; C. Bowness; A. Alizadeh; C. Chartrand; N. A. Brunelle; E. R. MacQuarrie; N. R. Lee-Hone; M. Ruether; M. Kazemi; A. T. K. Kurkjian; M. L. W. Thewalt; S. Simmons

doi:10.1117/12.2657753

8 March 2023 Integrated silicon T centers for quantum technologies

D. B. Higginbottom, A. DeAbreu, C. Bowness, A. Alizadeh, C. Chartrand, N. A. Brunelle, E. R. MacQuarrie, N. R. Lee-Hone, M. Ruether, M. Kazemi, A. T. K. Kurkjian, M. L. W. Thewalt, S. Simmons

Author Affiliations +

Proceedings Volume 12446, Quantum Computing, Communication, and Simulation III; 124460T (2023) https://doi.org/10.1117/12.2657753
Event: SPIE Quantum West, 2023, San Francisco, California, United States

Abstract

The performance of modular, networked quantum technologies will be contingent upon the quality of their light-matter interconnects. Solid-state colour centres, and in particular T centres in silicon, offer competitive technological and commercial advantages as the basis for quantum networking and distributed quantum computing. These newly rediscovered silicon defects offer direct telecommunications-band photonic emission, long-lived electron and nuclear spins, and proven integration into industry-standard, CMOS-compatible, silicon-on-insulator (SOI) photonic chips at scale. Here we present recent advances with T centre devices towards high-performance, large-scale distributed quantum technologies based upon T centres in silicon.

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D. B. Higginbottom, A. DeAbreu, C. Bowness, A. Alizadeh, C. Chartrand, N. A. Brunelle, E. R. MacQuarrie, N. R. Lee-Hone, M. Ruether, M. Kazemi, A. T. K. Kurkjian, M. L. W. Thewalt, and S. Simmons "Integrated silicon T centers for quantum technologies", Proc. SPIE 12446, Quantum Computing, Communication, and Simulation III, 124460T (8 March 2023); https://doi.org/10.1117/12.2657753

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