Modulated reflection and absorption spectroscopies of strained InGaAs/GaAs multiple quantum wells

Shuechu Shen; W. Shan; X. M. Fang; Z. Hang; Fred H. Pollak

doi:10.1117/12.20850

1 August 1990 Modulated reflection and absorption spectroscopies of strained InGaAs/GaAs multiple quantum wells

Shuechu Shen, W. Shan, X. M. Fang, Z. Hang, Fred H. Pollak

Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20850
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

The dependence of intersubband transitions on temperature and pressure in strained InGa1As/GaAs multiple quantum wells with different x and well widths has been investigated by use of the modulated reflection and absorption spectroscopies. The identifications for dislocation free at the interface will be discussed.

Citation Download Citation

Shuechu Shen, W. Shan, X. M. Fang, Z. Hang, and Fred H. Pollak "Modulated reflection and absorption spectroscopies of strained InGaAs/GaAs multiple quantum wells", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); https://doi.org/10.1117/12.20850

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