Temperature dependence of PL spectrum in researching InGaAs/GaAs single quantum well

Wei Fan; Xiaoxuan Xu; Xiufeng Sun

doi:10.1117/12.761077

8 January 2008 Temperature dependence of PL spectrum in researching InGaAs/GaAs single quantum well

Wei Fan, Xiaoxuan Xu, Xiufeng Sun

Proceedings Volume 6838, Optoelectronic Devices and Integration II; 68380S (2008) https://doi.org/10.1117/12.761077
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

The nondestructive photoluminescence technology has been introduced to test and evaluate the growth of InGaAs/GaAs Single-Quantum Well (SQW) by using Molecular Beam Epitaxy (MBE) technology. The experiments are carried out at different temperature in order to test the effect of variation of gap energy. When temperature varied, the lineshape of spectra changed, particular in the short wavelength part. The wavelength of emit light peak blue shift as well. We indicate that the main mechanism of the radiative recombination at high temperature is of band-to-band origin. However, at low temperature, exciton recombination is prevailing.

Citation Download Citation

Wei Fan, Xiaoxuan Xu, and Xiufeng Sun "Temperature dependence of PL spectrum in researching InGaAs/GaAs single quantum well", Proc. SPIE 6838, Optoelectronic Devices and Integration II, 68380S (8 January 2008); https://doi.org/10.1117/12.761077

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