A low-ripple fast boosting CMOS charge pump design

Mengzhang Cheng; Lili Deng

doi:10.1117/12.3031276

19 July 2024 A low-ripple fast boosting CMOS charge pump design

Mengzhang Cheng, Lili Deng

Proceedings Volume 13181, Third International Conference on Electronic Information Engineering, Big Data, and Computer Technology (EIBDCT 2024); 131813B (2024) https://doi.org/10.1117/12.3031276
Event: Third International Conference on Electronic Information Engineering, Big Data, and Computer Technology (EIBDCT 2024), 2024, Beijing, China

Abstract

A low ripple fast boost CMOS charge pump is designed for charging mobile phones. The charge pump has the advantages of low power consumption, low cost, and simple circuit. In the design of the charge pump, in order to improve its boosting speed, voltage boosting circuits for pre-charging the charging node and substrate automatic following circuits to overcome the substrate effect of field-effect transistors are designed separately; And the simple common drain amplifier is used to reduce the charge pump’s output ripple effectively. Based on CSMC 0.5 μm process and Dickson charge pump, a clock generation circuit, a charge pump circuit, a voltage regulation circuit, a pre-charging circuit, a substrate effect elimination circuit, and a common drain amplifier are designed. The charge pump circuits are designed and simulated by cadence. The simulation results show that the static current of the circuit is a few μA, the input voltage range is from 1V to 3V, and the output voltage is 4V. And the boosting time is below 100 μs, the ripple is less than 1mV, and when the input voltage is 1V, the static power consumption is only 0.3mW.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Mengzhang Cheng and Lili Deng "A low-ripple fast boosting CMOS charge pump design", Proc. SPIE 13181, Third International Conference on Electronic Information Engineering, Big Data, and Computer Technology (EIBDCT 2024), 131813B (19 July 2024); https://doi.org/10.1117/12.3031276

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