Paper
11 June 1999 High-performance chemically amplified positive electron-beam resist
Takahisa Namiki, Jun-Ichi Kon, Ei Yano
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Abstract
The effect of an alkali decomposable additive on a chemically amplified (CA) positive electron-beam (EB) resists was studied. HalogenoMethylEster (HME), 1,4- bis(bromoacetoxy) benzene was synthesize and used as an alkali decomposable additive. The hydrophobic HME decomposed with an alkali solution and changed into a hydrophilic, which in turn increased the alkali dissolution rate of the exposed region of the resist and enhanced the resist contrast. In addition, the bromomethyl groups and ester groups are hydrolyzed with a high degree of polarity change. HME having the large dissolution acceleration effect at an exposed region is suitable for application as a positive resist. HME was added to 2-component CA positive EB resist consisting of a base polymer and a photoacid generator. As a result of a high degree of polarity change, HME enhanced the resist contrast with no loss in sensitivity. The delineation of a fine 0.13 micrometers hole-pattern was possible with the addition of HME. The addition of HME rendered the sidewalls smooth and vertical.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takahisa Namiki, Jun-Ichi Kon, and Ei Yano "High-performance chemically amplified positive electron-beam resist", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350187
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KEYWORDS
Polymers

Lithography

Optical lithography

Chemically amplified resists

Coating

Molecules

Photomasks

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