Method of radical beam epitaxy

Tamaz V. Butkhuzi; Nodar P. Kekelidze; Dimitri N. Peikrishvili; Ekaterine G. Chikoidze; Lia T. Trapaidze; Maia M. Sharvashidze

doi:10.1117/12.344762

8 April 1999 Method of radical beam epitaxy

Tamaz V. Butkhuzi, Nodar P. Kekelidze, Dimitri N. Peikrishvili, Ekaterine G. Chikoidze, Lia T. Trapaidze, Maia M. Sharvashidze

Author Affiliations +

Proceedings Volume 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (1999) https://doi.org/10.1117/12.344762
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

On the base of the thermodynamical analyze of point defects concentration correlation an effective method to obtain intrinsic defective hole conductivity in wide-band-gap II-VI compounds (ZnS, ZnO, ZnSe) was suggested and performed. The method was called Radical Beam Epitaxy. The photoluminescence spectra and electrical properties of ZnS substrate crystal and epitaxial ZnO layers were investigated. The centers responsible for hole conductivity in ZnS samples have been identified.

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Tamaz V. Butkhuzi, Nodar P. Kekelidze, Dimitri N. Peikrishvili, Ekaterine G. Chikoidze, Lia T. Trapaidze, and Maia M. Sharvashidze "Method of radical beam epitaxy", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344762

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