IC yield enhancement through optimization of photolithography pattern at the isolation step

Kerry J. Nagel; Steve Spivey; Ping Wang

doi:10.1117/12.361322

3 September 1999 IC yield enhancement through optimization of photolithography pattern at the isolation step

Kerry J. Nagel, Steve Spivey, Ping Wang

Proceedings Volume 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V; (1999) https://doi.org/10.1117/12.361322
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

The yield of an oxide isolated bipolar technology was substantially enhanced by changing the photolithography processing at the isolation layer. Changing the exposure bias improved the Cpk by 25% and the yield by 6%. Changing to a different develop chemistry eliminated corner defects and substantially reduced fallout for leakage. Corner defects are correlated to microgrooves and protuberances in the photoresist profile. In this paper, the mechanism for the yield improvement is explained.

Citation Download Citation

Kerry J. Nagel, Steve Spivey, and Ping Wang "IC yield enhancement through optimization of photolithography pattern at the isolation step", Proc. SPIE 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V, (3 September 1999); https://doi.org/10.1117/12.361322

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