Paper
10 April 2000 Surface investigation of porous GaAs used for luminescent films
Valentinas J. Snitka, I. Simkiene, K. Grigoras, Vytautas Jasutis, Kestutis Naudzius, Vaidas Pacebutas, J. Sabataityte, Vida Mizariene
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Proceedings Volume 4019, Design, Test, Integration, and Packaging of MEMS/MOEMS; (2000) https://doi.org/10.1117/12.382323
Event: Symposium on Design, Test, Integration, and Packaging of MEMS/MOEMS, 2000, Paris, France
Abstract
The investigations of photo luminescence spectra of the electrochemically produced porous GaAs layers, excited by continuous Ar laser radiation, were carried out. The chemical composition of the anodized p- and n-GaAs was analyzed by x-ray photoelectron spectroscopy. The GaAs surface morphology was examined by high-resolution transmission-electron microscopy and surface structure was investigated by electronograph EMR100 and Atomic Force Microscopy. It is established that increasing a duration and current density of etching changes the porosity of bulk GaAs and both Galium and arsenic oxides are formed on the sample surface Photo luminescence spectra of investigated porous surface consist of 'IR' and 'green' spectral structures. The 'IR' structure exhibits redshifts of its peak energies, and 'green' structure intensity is dependent on etching conditions. A possible reason of origin and changes in those spectra is discussed.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Valentinas J. Snitka, I. Simkiene, K. Grigoras, Vytautas Jasutis, Kestutis Naudzius, Vaidas Pacebutas, J. Sabataityte, and Vida Mizariene "Surface investigation of porous GaAs used for luminescent films", Proc. SPIE 4019, Design, Test, Integration, and Packaging of MEMS/MOEMS, (10 April 2000); https://doi.org/10.1117/12.382323
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KEYWORDS
Gallium arsenide

Luminescence

Etching

Arsenic

Chemical analysis

Infrared radiation

Oxides

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