Improved high-temperature operation of InGaAs/AlGaAs LOC SQW diode lasers by incorporation of short-period superlattice quantum-well barriers

Nicolas Wiedmann; Juergen Jandeleit; Michael Mikulla; Rudolf Kiefer; G. Bihlmann; Reinhart Poprawe; Guenter Weimann

doi:10.1117/12.432572

9 July 2001 Improved high-temperature operation of InGaAs/AlGaAs LOC SQW diode lasers by incorporation of short-period superlattice quantum-well barriers

Nicolas Wiedmann, Juergen Jandeleit, Michael Mikulla, Rudolf Kiefer, G. Bihlmann, Reinhart Poprawe, Guenter Weimann

Author Affiliations +

Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432572
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

InGaAs/AlGaAs large optical cavity (LOC) single quantum well (SQW) lasers emitting at 980nm were grown incorporating an AlGaAs/GaAs short-period superlattice layer next to the quantum well in order to improve the carrier confinement and thus high-temperature operation. Symmetric and asymmetric structures have been realized. High characteristic temperatures T0 above 300K between 20#C and 50#C operating temperature were measured for the symmetric structures without deterioration of the internal quantum efficiencies (> 90%) and low intrinsic losses (about 1cm-1). The improvement in the characteristic temperature is mainly attributed to the reduced thermionic emission of the carriers out of the quantum well due to the large effective barrier height of the short-period superlattice. Caused by the incorporation of the short-period superlattice the devices showed a higher series resistance, which could be lowered by switching to asymmetric structures. These asymmetric devices had unchanged high internal quantum efficiencies and low intrinsic losses but lower characteristic temperatures of about 250K.

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Nicolas Wiedmann, Juergen Jandeleit, Michael Mikulla, Rudolf Kiefer, G. Bihlmann, Reinhart Poprawe, and Guenter Weimann "Improved high-temperature operation of InGaAs/AlGaAs LOC SQW diode lasers by incorporation of short-period superlattice quantum-well barriers", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); https://doi.org/10.1117/12.432572

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