Low-threshold, high-TO and high-efficiency 1300nm and 1500nm lasers with AlInGaAs active region grown by MOCVD

Ashish Tandon; David P. Bour; Ying Lan Chang; Chao Kun Lin; Scott W. Corzine; Michael R. Tan

doi:10.1117/12.540319

18 June 2004 Low-threshold, high-T₀ and high-efficiency 1300nm and 1500nm lasers with AlInGaAs active region grown by MOCVD

Ashish Tandon, David P. Bour, Ying Lan Chang, Chao Kun Lin, Scott W. Corzine, Michael R. Tan

Author Affiliations +

Proceedings Volume 5349, Physics and Simulation of Optoelectronic Devices XII; (2004) https://doi.org/10.1117/12.540319
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

We report results for broad area edge emitting lasers having AlInGaAs active regions that exhibit low thresholds, high T₀ and T₁ and high efficiencies. The lasers were grown on InP substrates using MOCVD. This paper analyzes the effects of doping, epilayer design, wavelength dependence and number of QWs on device performance. Our results show that the concentration and offset of zinc doping in the p-cladding layer plays a major role in carrier confinement and hence high temperature performance. The difference in surface mobility of Al adatoms (as compared to In or Ga) poses some challenges in the growth of AlInGaAs.

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Ashish Tandon, David P. Bour, Ying Lan Chang, Chao Kun Lin, Scott W. Corzine, and Michael R. Tan "Low-threshold, high-T₀ and high-efficiency 1300nm and 1500nm lasers with AlInGaAs active region grown by MOCVD", Proc. SPIE 5349, Physics and Simulation of Optoelectronic Devices XII, (18 June 2004); https://doi.org/10.1117/12.540319

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