Resistless electron beam lithography technique for the fabrication of x-ray masks

Eric Lavallee; Dominique Drouin; Jacques Beauvais

doi:10.1117/12.425086

9 April 2001 Resistless electron beam lithography technique for the fabrication of x-ray masks

Eric Lavallee, Dominique Drouin, Jacques Beauvais

Proceedings Volume 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2001) https://doi.org/10.1117/12.425086
Event: 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2000, Munich, Germany

Abstract

Among the key issues for the use of X-ray lithography as a next generation lithography process is the fabrication of masks with high resolution and high aspect ratio absorbent structures. Due to its chemical stability, tantalum is the most widely used absorber for this application. However, the chemical resistance of the etch mask used to pattern the tantalum layer is a problem that needs to be addressed. In this paper, we present a fabrication technique which eliminates the use of such an intermediary etch mask by using a high resolution Silicide Direct-Write Electron Beam Lithography process to pattern the masks.

Citation Download Citation

Eric Lavallee, Dominique Drouin, and Jacques Beauvais "Resistless electron beam lithography technique for the fabrication of x-ray masks", Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); https://doi.org/10.1117/12.425086

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