Low-power tunable nanocircuits with DG-MOSFETs for current sensing applications

Savas Kaya; Hesham F. A. Hamed

doi:10.1117/12.736390

25 September 2007 Low-power tunable nanocircuits with DG-MOSFETs for current sensing applications

Savas Kaya, Hesham F. A. Hamed

Proceedings Volume 6769, Nanosensing: Materials, Devices, and Systems III; 67690D (2007) https://doi.org/10.1117/12.736390
Event: Optics East, 2007, Boston, MA, United States

Abstract

Highly-integrated mixed-mode nanocircuits are required to interface nanosensors with mainstream information systems based on advanced sub-50nm CMOS architectures. Such nanocircuits may serve a number of crucial signal processing tasks such as current sensing, filtering and amplification. Most importantly they are required to have 'adaptive' or programmable features that can deal with the signal integrity concerns and fluctuations in nanosensor characteristics. Yet another requirement for nanocircuits serving to nanosensors is low-power and high-linearity whereby impact to the working ambient is minimized and signal quality is ensured, respectively. In this work we introduce a range of mixedmode nanocircuits built using double-gate (DG) MOSFET technology expected to replace the planar bulk CMOS in sub-50nm regime, i.e. within the next decade.

Citation Download Citation

Savas Kaya and Hesham F. A. Hamed "Low-power tunable nanocircuits with DG-MOSFETs for current sensing applications", Proc. SPIE 6769, Nanosensing: Materials, Devices, and Systems III, 67690D (25 September 2007); https://doi.org/10.1117/12.736390

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