Characterization and qualification of deep-submicron OTP poly-fuse memory

N. Belova; Derryl Allman; Stephen Tibbitts

doi:10.1117/12.2017548

18 July 2013 Characterization and qualification of deep-submicron OTP poly-fuse memory

N. Belova, Derryl Allman, Stephen Tibbitts

Proceedings Volume 8700, International Conference Micro- and Nano-Electronics 2012; 87000K (2013) https://doi.org/10.1117/12.2017548
Event: International Conference on Micro-and Nano-Electronics 2012, 2012, Zvenlgorod, Russian Federation

Abstract

The statistical characterization and reliability results for a One Time Programmable (OTP) non-volatile memory that uses a p-type cobalt salicide polysilicon (CoSi₂) fuse for a 0.25μm technology are presented. The fuse element consists of a minimum width 80 Ohm poly resistor with rectangular head connections surrounded by oxynitride and passivating oxide layers. A low resistance transistor is used to control the programming voltage rise and fall time of the fuse. The chosen programming voltage and time at 27°C causes local Joule heating and electromigration of the Cobalt with dissolution of the polysilicon and diffusion of the p-type dopant to the anode. A characterization methodology was developed for determining the optimum programming conditions to form an amorphous, void free fuse with a final resistance of greater than 1MOhm without disturbing the passivating films. The process window characterization showed that thinner CoSi₂ films resulted in significant reduction of partially blown fuses in the tail of the resistance distributions. The JEDEC HTOL/HTSL specified methods were used to stress 3.9 million programmed fuses at 125°C/150°C for up to 2000 hours which resulted in no bit failures for three lots tested. The resistance drift for programmed fuses after thermal and electrical stress showed no significant change in the distributions.

Citation Download Citation

N. Belova, Derryl Allman, and Stephen Tibbitts "Characterization and qualification of deep-submicron OTP poly-fuse memory", Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000K (18 July 2013); https://doi.org/10.1117/12.2017548

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