Avalanche Characteristics Of Silicide Schottky Barrier Diodes

Kenneth L Yates; Eustace L Dereniak

doi:10.1117/12.945847

18 July 1988 Avalanche Characteristics Of Silicide Schottky Barrier Diodes

Kenneth L Yates, Eustace L Dereniak

Proceedings Volume 0929, Infrared Optical Materials IV; (1988) https://doi.org/10.1117/12.945847
Event: 1988 Technical Symposium on Optics, Electro-Optics, and Sensors, 1988, Orlando, FL, United States

Abstract

Schottky barrier diodes have received much attention for use as detectors in fiber optic communication systems requiring large bandwidth and good signal-to-noise performance. This paper will discuss what characteristics go into making maximum performance avalanche Schottky barrier detectors and why the Schottky barrier diode is a good candidate. Specifically, the report will discuss the design and performance of platinum silicide (PtSi) Schottky diodes.

Citation Download Citation

Kenneth L Yates and Eustace L Dereniak "Avalanche Characteristics Of Silicide Schottky Barrier Diodes", Proc. SPIE 0929, Infrared Optical Materials IV, (18 July 1988); https://doi.org/10.1117/12.945847

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