Lydia K. Jarvis,1 Ben Maglio,1 Samuel Shutts,1 Zhibo Lihttps://orcid.org/0000-0002-6913-1426,1 Huiwen Deng,2 Mingchu Tang,2 Huiyun Liu,2 Peter Smowton1
1Cardiff Univ. (United Kingdom) 2Univ. College London (United Kingdom)
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The performance of O-band InAs/GaAs quantum-dot (QD) lasers grown by molecular beam epitaxy with three different doping strategies are investigated in a temperature range 17 °C – 97 °C. We demonstrate lasers with a reduced threshold current using direct n-doping (during the dot formation) in the active region compared lasers with a nominally undoped active region. We explain results using calculations of the dot and wetting layer potentials and the electron and hole energy levels.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Lydia K. Jarvis, Ben Maglio, Samuel Shutts, Zhibo Li, Huiwen Deng, Mingchu Tang, Huiyun Liu, Peter Smowton, "Active region doping strategies in O-band InAs/GaAs quantum-dot lasers," Proc. SPIE PC12021, Novel In-Plane Semiconductor Lasers XXI, PC1202104 (9 March 2022); https://doi.org/10.1117/12.2614632