We introduce direct n-doping of quantum dots together with modulation p-doping as a technique to reduce both the threshold current density and the temperature dependence of threshold current density in 1.3um emitting quantum dot lasers. Threshold current density in 1mm long QD lasers with cleaved and uncoated facets is effectively halved at both 27°C and at 97°C when using co-doping as compared to the undoped case. Results indicate that modulation p-doping can improve the threshold current temperature dependence and direct n-doping reduces the magnitude of threshold current density and that the benefits of each is maintained when used together.
The performance of O-band InAs/GaAs quantum-dot (QD) lasers grown by molecular beam epitaxy with three different doping strategies are investigated in a temperature range 17 °C – 97 °C. We demonstrate lasers with a reduced threshold current using direct n-doping (during the dot formation) in the active region compared lasers with a nominally undoped active region. We explain results using calculations of the dot and wetting layer potentials and the electron and hole energy levels.
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