Surface quality of optical lenses is an important parameter to achieve optimal imaging quality. Surface imperfections such as scratches, pits, or digs which may be caused during manufacturing or handling induce light scattering and degrade the overall performance of the imaging system. For a lightweight lens, the pockets behind the lens will affect the defect judgment due to excellent optical transmittance. This article discusses the measurement flow of automatic optical inspection for large lenses, defect detection algorithm, and the practicality of application of this technique for inspection of large lenses. Surface defect detection module comprises of high dynamic range camera combined with telecentric imaging lens creating an imaging system with resolution of 2.7μm. Inspection of the whole surface before and after coating is carried out through concentric scanning and different illustrating angles. The images are captured with a 20% overlap between two consecutive images to ensure complete coverage of the whole surface. Image processing algorithms are applied to detect and classify any surface defects on the surface. Detection results consists of exact size, type, and location of the defects are analyzed by the system and summarized into an inspection report. Compared to classical manual inspection this system provides reproducible and objective detection results and allows users to perform revalidation after measurement is finished.
Patterned sapphire substrates (PSS) wafers are used in LED manufacturing to enhance the luminous conversion of LED
chips. The most critical characteristics in PSS wafers are height, width, pitch and shape of the pattern. The common way
to measure these characteristics is by using surface electron microscope (SEM). White light interferometry is capable to
measure dimension with nanometer accuracy and it is suitable for measuring the characteristics of PSS wafers. One of
the difficulties in measuring PSS wafers is the aspect ratio and density of the features. The high aspect ratio combined
with dense pattern spacing diffracts incoming lights and reduces the accuracy of the white light interferometry
measurement. In this paper, a method to improve the capability of white light interferometry for measuring PSS wafers
by choosing the appropriate wavelength and microscope objective with high numerical aperture. The technique is proven
to be effective for reducing the batwing effect in edges of the feature and improves measurement accuracy for PSS
wafers with circular features of 1.95 um in height and diameters, and 700 nm spacing between the features. Repeatability
of the measurement is up to 5 nm for height measurement and 20 nm for pitch measurement.
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