Ushio's LDP (Laser-assisted Discharge-produced Plasma) EUV source is a plasma EUV source utilizing rotating electrodes, circulating liquid tin, repetitive pulsed high-current discharge up to 10 kHz (15 kW), trigger lasers, and a debris filter to protect the optics from the tin debris emitted from the plasma [1]. The LDP EUV source can offer excellent light performance [2-3] for various applications in the semiconductor manufacturing ecosystems and has been used for Actinic Patterned Mask Inspection (APMI) [4] and beamline applications. Ushio is dedicated to continuous development, particularly performance, reliability and cost-of-ownership (CoO). Our research involved a series of experiments to measure the brightness, power, stability, and fast ions under various discharge conditions. We also implemented a more effective design to the debris filter. Data indicate that this modification will double the collector lifetime without compromising optical transmission. As a result of quality and robustness enhancements of the modules, the source MTBM has reached five weeks and is approaching six weeks in the field.
The Laser-assisted Discharge-produced Plasma (LDP) EUV source is a system to generate EUV from discharged plasma triggered by laser on one electrode disc which is coated by tin film. The source has been proven as a highly reliable light source in EUVL high volume production. Also, LDP EUV source enables to generate high brightness with relatively larger EUV plasma, which benefits space stability as well as relatively larger plasma power. In this session, the following items will be presented. (1) LDP EUV source configuration and operation sequence. (2) LDP EUV source key performance (3) Stability Improvement (4) Reliability improvement. (5) Sample exposure application
The Laser-assisted Discharge-produced Plasma (LDP) EUV source is a system to generate EUV from discharged plasma triggered by laser on one electrode disc which is coated by tin film. The source has been proven as a highly reliable light source in EUVL high volume production. Also, LDP EUV source enables to generate high brightness with relatively larger EUV plasma, which benefits space stability as well as relatively higher plasma power. In this session, the following items will be presented. (1) LDP EUV source configuration and operation sequence. (2) LDP EUV source key performance (3) Reliability improvement. (4) Others.
The most critical enabler of actinic patterned mask inspection technology/capability has been the EUV source. In this paper, we discuss the performance and reliability improvements achieved for the LDP EUV Source (Laser-assisted Discharge Produced Plasma EUV Source) used in Intel actinic patterned-mask inspection systems. These improvements encompass several critical aspects such as EUV emission conversion efficiency, source lifetime and debris mitigation effectiveness. Optimization of the parameters that influence LDP discharge has enabled improvement to these performance indicators. Duration of continuous operation of the source has been extended by novel modification of the electrode design as well as other changes. Ion induced damage to the optical components such as downstream mirrors was mitigated by development of an effective debris mitigation approach. These improvements have significantly increased the duration of uninterrupted operation, EUV brightness level, as well as improvements in plasma stability.
The Laser-assisted Discharge-produced Plasma (LDP) EUV source has been developed as a light source for actinic mask inspection and is currently deployed in the field. As the EUVL process is used more in the mass-production process, the requirement for EUV source for mask inspection is required more. LDP source enables the generation of high brightness with relatively large EUV plasma to fulfill these requirements. Ushio LDP source has overcome various issues specialized from LDP source and realized high reliability 24/7 based operation with high brightness maintained. In this paper, we address the followings: (1) LDP source configuration and its monitoring system, (2) Features of LDP source for inspection purposes, (3) Recent availability in the field, (4) Improvement of source stability and cleanliness, and (5) Roadmap of source availability.
The Laser-assisted Discharge-produced Plasma (LDP) EUV source has been developed as a light source for actinic mask inspection and beamline application and deployed in the field. LDP EUV source enables to generate high brightness with relatively larger EUV plasma by discharged plasma triggered by laser on one electrode disc which is coated by tin film. As EUVL process is used more in mass-production process, the requirement for EUV source for mask inspection is required more. USHIO LDP source has overcome various issues specialized from LDP source and realized high reliability 24/7 based operation with high brightness maintained. In this session, the following items will be presented. (1) LDP EUV source configuration and operation sequence. (2) LDP EUV source key performance (3) Reliability improvement items. (4) High Brightness Development
The Laser-assisted Discharge-produced Plasma (LDP) EUV source has been developed as a light source for actinic mask inspection and beamline application and deployed in the field. LDP EUV source enables to generate high brightness with relatively larger EUV plasma by discharged plasma triggered by laser on one electrode disc which is coated by tin film.
As EUVL process is used more in mass-production process, the requirement for EUV source for mask inspection is required more. USHIO LDP source has overcome various issues specialized from LDP source and realized high reliability 24/7 based operation with high brightness maintained.
High-throughput actinic mask inspection tools are needed as EUVL begins to enter into volume production phase. One of the key technologies to realize such inspection tools is a high-radiance EUV source of which radiance is supposed to be as high as 100 W/mm2/sr. Ushio is developing laser-assisted discharge-produced plasma (LDP) sources. Ushio’s LDP source is able to provide sufficient radiance as well as cleanliness, stability and reliability. Radiance behind the debris mitigation system was confirmed to be 120 W/mm2/sr at 9 kHz and peak radiance at the plasma was increased to over 200 W/mm2/sr in the recent development which supports high-throughput, high-precision mask inspection in the current and future technology nodes. One of the unique features of Ushio’s LDP source is cleanliness. Cleanliness evaluation using both grazing-incidence Ru mirrors and normal-incidence Mo/Si mirrors showed no considerable damage to the mirrors other than smooth sputtering of the surface at the pace of a few nm per Gpulse. In order to prove the system reliability, several long-term tests were performed. Data recorded during the tests was analyzed to assess two-dimensional radiance stability. In addition, several operating parameters were monitored to figure out which contributes to the radiance stability.
The latest model that features a large opening angle was recently developed so that the tool can utilize a large number of debris-free photons behind the debris shield. The model was designed both for beam line application and high-throughput mask inspection application. At the time of publication, the first product is supposed to be in use at the customer site.
High-throughput and -resolution actinic mask inspection tools are needed as EUVL begins to enter into volume production phase. To realize such inspection tools, a high-radiance EUV source is necessary. Ushio’s laser-assisted discharge-produced plasma (LDP) source is able to meet industry’s requirements in radiance, cleanliness, stability and reliability. Ushio’s LDP source has shown the peak radiance at plasma of 180 W/mm2/sr and the area-averaged radiance in a 200-μm-diameter circle behind the debris mitigation system of 120 W/mm2/sr. A new version of the debris mitigation system is in testing phase. Its optical transmission was confirmed to be 73 %, which is 4 % lower than that of the previous version and therefore will be improved. Cleanliness of the system is evaluated by exposing Ru mirrors placed behind the debris mitigation system. Ru sputter rate was proven to be sufficiently low as 3~5 nm/Gpulse at 7 kHz, whereas frequency-dependent sputter rate was 1~3 nm/Gpulse at 5~9 kHz as previously reported. Sn deposition remained very low (< 0.05 nm) and did not grow over time. A new technique to suppress debris was tested and preliminary results were promising. Time-of-flight signal of fast ions was completely suppressed and Ru sputter rate of exposed mirrors at 3 kHz was approximately 1.3 nm/Gpulse, whereas the conventional mitigation system (new version) resulted in Ru sputter rate of 0.7 nm/Gpulse. This new technique also allows increasing the radiance efficiency by 30 %. Stability tests were done at several different discharge frequencies. Pulse energy stability was approximately 10 %. Dose energy stability dropped from approximately 2 % to 0.1 % when feedback control was activated. EUV emission position stability was studied at 3 kHz. Deviation of the plasma center of gravity was 6 μm, which is 3 % of plasma diameter and therefore considered to be negligible. Reliability tests were performed on both R and D and prototype machines and up to 200 hours of non-interrupted operation was demonstrated.
Actinic mask inspection manufactures are currently searching for high-radiance EUV sources for their tools. LDP source, which was previously used for lithography purposes, was found to be a good candidate as it can provide sufficient power and radiance. Introduction of new techniques, modified modules and fine tuning of operational conditions (discharge pulse energy, discharge frequency, laser) has brought radiance level to 180 W/mm2/sr at plasma or 145 W/mm2/sr as clean-photon. The source has been modified in such a way to improve modules reliability, lifetime and radiance stability even though there is still a room for further improvement. Size of the source system is much smaller than that of the lithography source. A debris mitigation system has been tested. Optical transmission was improved to 77 % and several 8-nm-thick Ru samples were exposed to evaluate contamination and erosion of optics. Preliminary results show low sputter and deposition rates, which supports sufficiently long lifetime of the optics.
High-radiance EUV source is needed for actinic mask inspection applications. LDP source for a lithography application was found to be also able to provide sufficient radiance for mask inspection purpose. Since the plasma size of LDP is properly larger than LPP, not only radiance but also power is suitable for mask inspection applications. Operating condition such as discharge pulse energy, discharge frequency and laser parameter have been tuned to maximize radiance. Introduction of new techniques and several modifications to LDP source have brought radiance level to 180 W/mm2/sr at plasma (or 130 W/mm2/sr as clean-photon radiance). The LDP source is operated at moderate power level in order to ensure sufficient component lifetime and reliability. The first lifetime test done at 10 kHz resulted in 6.5 Gpulse without failure. Debris mitigation system has been successfully installed showing optical transmission as high as 71 %.
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