The integration of any new material into device architectures necessarily requires interfaces with dissimilar materials. In the case of semiconducting transition metal dichalcogenide (TMDCs) WSe2 the interface with a gate dielectric is extremely important. Presented will be our work on two approaches to WSe2 integration. The first considers the direct growth of WSe2 on and insulating substrate. Here we consider the impact of the WSe2 on the dielectric itself. In the second approach we investigate the deposition of dielectrics by atomic layer epitaxy onto WSe2 with a focus on enhancing nucleation and the considering the impact of surface functionalization on device performance
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