An self-oscillating parametric optical transducer based on a quantum double-barrier heterostructure is proposed, the basic element of which is a tunnel-resonant diode, and it acts as a primary optical transducer and as an selfoscillating, which greatly simplifies the design of the optical transducer. Based on the consideration of physical processes in the tunnel-resonant diode, a mathematical model of the optical transducer was developed, on the basis of which the parametric dependence of the conversion and sensitivity functions was obtained. It is shown that the main contribution to the change of transformation functions and sensitivity is introduced by a change in optical power. This causes a change in the negative differential resistance of the oscillating system of the self-oscillating of the transducer, which, in turn, changes the output frequency of the device. At the same time, the internal capacitance and inductance also depend on the action of the optical power, but these changes do not affect the output frequency, since the external capacitance and inductance are four orders of magnitude greater than the internal capacitance and inductance of the tunnel-resonant diode. The sensitivity of the optical transducer varies from 15.27 kHz/μW/cm2 to 16.37 kHz/μW/cm2 in the measuring power range from 0 to 100 μW/cm2.
The article investigated the optical-frequency gas flow meter based on a transistor structure with negative differential resistance (NDR). A schematic diagram and design of an optical-frequency gas flow transducer that operates in the microwave range (0.85 to 1.5 GHz), which consists of a bipolar and field-effect transistor with a Schottky barrier, is proposed as a photosensitive element using a photoresistor. A mathematical model of an optical-frequency gas flow meter based on a transistor structure with negative differential resistance has been developed, which allows one to obtain the main characteristics of the transducer in a wide frequency range. Theoretically and experimentally, the possibility of controlling both the reactive component and the negative differential resistance from changes in control voltage and power is shown, it extends the functionality of optical transducers and allows linearization of the conversion function within (0.1 - 0.2)%. Experimental studies have shown that the greatest sensitivity and linearity of the conversion function of an opticalfrequency gas flow transducer lies in the range from 3 V to 3.5 V. The sensitivity of the developed optical-frequency gas flow transducer based on a transistor structure with NDR is 146 kHz/liter/hour, and the measurement error is ± 1.5%.
The paper studies radiomeasuring device with a frequency output signal based on a pyroelectric primary converter. The frequency converter of optical radiation is designed using a bipolar transistor structure with a negative differential resistance and a pyroelectric sensitive element. A dynamic mathematical model of the frequency radiomeasuring converter has been developed which enables to determine the value of voltage or current at any point in the circuit at any particular time under the action of optical radiation in the region of infrared light. Analytical expressions for the transfer function and the sensitivity equation have been obtained. The sensitivity of the developed device is 20 kHz/μW/cm2.
The paper studies a frequency transducer of the gas concentration for detection of Helicobacter Pylori strains based on the MOSFET-bipolar transistor structure with a negative differential resistance and a highly sensitive NH3 sensor. A dynamic mathematical model of the frequency transducer of gas concentration has been developed using the state variable method which makes it possible to determinate the value of voltage or current at any point of the circuit at any particular time when the gas concentration is changed. Analytical expressions for transfer function and sensitivity equation have been obtained on the basis of the nonlinear equivalent circuit of the frequency gas concentration transducer. Sensitivity of the developed device for detecting Helicobacter Pylori strains is from 2.1 kHz/ppm to 3.4 kHz/ppm.
In the work the non-standard system of w-parameters of the microwave quadripoles is proposed. a method of floating loads for the determination of w-parameters of microwave quadripoles is developed. the elements of the theory of the method of floating loads are proposed. new equations for determining the w-parameters of microwave quadripoles are obtained. the experimental setup for the determination of w-parameters of microwave quadripoles is developed. the results of experimental studies of w-parameters of the field transistor are obtained.
KEYWORDS: Transistors, Electrons, Field effect transistors, Transducers, Resistance, Semiconductors, Microelectronics, Diffusion, Active optics, Radio optics
The paper deals with the fundamentals of the theory of photoreactive effect in bipolar and field-effect transistor structures. Photoreactive properties of semiconductor devices are widely used in a variety of radio electronics devices. Therefore, the study of these phenomena in bipolar transistor structures with negative resistance, allows us to create new sensory devices, which have better parameters than existing ones. The method of construction of radiomeasuring microelectronic transducers is offered on the base of photoreactive effect in sensing bipolar and field transistor structures, that has established premises for embodying transducers of optical radiation with a frequency output signal.
The application of the proposed mathematical tools, that can be used for signal processing self-generating transducers of physical quantities, are considered. Its operating mechanism is based on frequency modulation, when the frequency deviation depends on the intensity of exposure measurement parameter. It is shown that the action for leveling additive errors in the channel the signal generator is highly stable enough to use approximating second order polynomial.
KEYWORDS: Magnetism, Transducers, Transistors, Microelectronics, Resistance, Semiconductors, Magnetic semiconductors, Inductance, Electrons, Chemical elements
The analysis is carried out and the possibility of creation of microelectronic auto generator transducers of magnetic field on the basis of transistor structures with a negative resistance is shown. Characteristics of microelectronic auto generator transducers of magnetic field with Hall's elements with the broad range of frequencies from 103 to 107 Hz are offered and investigated, at the same time the sensitivity of devices changes from 103 kHz/mT up to 105 kHz/mT.
The paper analyses modern development status of temperature transducer on the basis of piroelectrics, represents and describes a new temperature transducer on the basis of transistor structure with negative differential resistance, simulates current-voltage and frequency characteristic of this device in the software environment Pspice.
In the article the physical mechanism of optical radiation co-operation with semiconductor devices, technological route of making of MOS - phototransistor with bilateral illumination of channel has been considered. Also the optical transducer with frequency output based on the structure of the bipolar-field transistors with negative resistance and MOSFET with bilateral illumination of channel that is a photosensitive element has been considered. A mathematical model of the radio measuring optical transducer has been developed.
In the article the pressure transducer with frequency output based on the structure of the bipolar-field transistors with negative resistance and tenso sensitive MEMS capacitor has been considered. A mathematical model of the frequency pressure transducer in dynamic regime has been developed that allowed to determine the voltage or current in the circuit at any given moment in time when acting this pressure. Analytical expressions of the conversion function and sensitivity equation has been received. The sensitivity of the developed device is between 0,95kHz/kPa to 1,65kHz/kPa.
In this work the characteristics research of microelectronic transducers of optical radiation with a frequency output signal on the basis of a hybrid integrated circuit consisting of a bipolar and a field-effect transistor with a Schottky barrier is presented. The connection of an external inductance to electrodes a collector - drain allows to implement the auto generating device. The frequency of the device generation depends on power of optical radiation falling on photosensing elements as a photoresistor, photodiode and photosensing transistors switched on in a circuit of the self-excited oscillator. The impedance on electrodes the collector - drain of bipolar and field transistors has capacitive reactive part and negative active resistance, which compensates power losses in a tuning circuit of the device. On the base of a nonlinear equivalent circuit of the transducer on an alternating current the analytical expressions of function of transformation and equation of sensitivity are obtained. The sensitivity of optical transducers lays in a range from 25 kHz/μWt/cm2 up to 150 kHz/μWt/cm2.
The opportunity of direct transformation of pressure in frequency is shown on the basis of the hybrid integrated circuit consisting of the two-collector pressure sensitive transistor and the field two-gate transistor with an active inductive element on the basis of the bipolar transistor with a phase-shifting RC chain. Analytical dependencies of transformation function and the equation of sensitivity are received. Theoretical and experimental research have shown, that sensitivity of the transducer makes 1,55–1,10kHz/kPa.
The research results of the superhigh-frequency optoelectronic converter are presented. The converter permits to convert optical radiation into superhigh-frequency oscillations in the range of frequencies from 0,5 up to 5 GHz.
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